Datasheet > KDB4020P(FDB4020P)

KDB4020P(FDB4020P)

更新时间： 2024-06-27 12:12:36

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科信 - KEXIN		/
页数	文件大小	规格书
2页	51K
描述
P-Channel MOSFET

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数据手册

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KDB4020P(FDB4020P) 数据手册

浏览型号KDB4020P(FDB4020P)的Datasheet PDF文件第2页

SMD Type

MOSFET

P-Channel 2.5V Specified Enhancement

Mode Field Effect Transistor

KDB4020P^(FDB4020P)

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

+0.1

1.27

-0.1

-16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V

R^DS(on)= 0.11 Ù @ VGS = -2.5 V.

Critical DC electrical parameters specified at elevated

temperature.

+0.1

-0.1

0.1max

1.27

High density cell design for extremely low RDS(on).

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Symbol

V^DSS

V^GSS

Rating

Unit

-20

-16

Drain current T^C=25

Drain current-pulsed

I^dp

-48

Power dissipation

37.5

0.25

Derate above 25

Thermal Resistance, Junction-to- Case

Thermal Resistance Junction to Ambient

Channel temperature

RèJC

R^èJA

T^ch

175

Storage temperature

Tstg

-55 to +175

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