5秒后页面跳转
KD40F120 PDF预览

KD40F120

更新时间: 2024-11-08 21:53:59
品牌 Logo 应用领域
SANREX 整流二极管
页数 文件大小 规格书
2页 100K
描述
DIODE MODULE

KD40F120 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.4 V最大非重复峰值正向电流:1200 A
最高工作温度:125 °C最大输出电流:40 A
最大重复峰值反向电压:1200 V子类别:Rectifier Diodes
表面贴装:NOBase Number Matches:1

KD40F120 数据手册

 浏览型号KD40F120的Datasheet PDF文件第2页 
DIODE MODULE  
DD40F/KD40F  
UL;E76102M)  
Power Diode Module DD40F series are designed for various rectifier circuits. DD40F  
has two diode chips connected in series in 25mm (1inch) width package and the mounting  
base is elctrically isolated from elements for simple heatsink construction. Wide voltage  
rating up to, 1,600V is avaiable for various input voltage.  
92  
20  
20  
20  
2-  
6
Isolated mounting base  
Two elements in a package for simple (single and three phase) bridge  
connections  
Highly reliable glass passivated chips  
High surge current capability  
M5X10  
Applications)  
Various rectifiers, Battery chargers, DC motor drives  
DD  
2�  
2�  
1�  
1�  
3�  
3�  
80±0.2  
KD  
Unita  
Maximum Ratings  
Tj25unless otherwise specified)  
Ratings  
Symbol  
Item  
Unit  
DD40F40  
400  
DD40F80  
800  
DD40F120  
1200  
DD40F160  
1600  
VRRM  
VRSM  
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
V
V
480  
960  
1300  
1700  
Symbol  
Item  
Conditions  
Ratings  
40  
Unit  
A
IFAV)  
Average Forward Current  
R.M.S. Forward Current  
Surge Forward Current  
Single phase, half wave, 180°conduction, Tc96℃  
F (RMS)  
I
62  
A
Single phase, half wave, 180°conduction, Tc96℃  
1
FSM  
I
Z
A
cycle, 50/60H , peak Value, non-repetitive  
1200/1300  
7200  
2
2
2
2
I
I t  
Value for one cycle of surge current  
A.C.1minute  
A S  
t
ISO  
V
2500  
Isolation Breakdown VoltageR.M.S.)  
Junction Temperature  
V
Tj  
40 to 125  
40 to 125  
2.728)  
2.728)  
170  
Tstg  
Storage Temperature  
MountingM5Recommended Value 1.5-2.515-25)  
Terminal M5Recommended Value 1.5-2.515-25)  
Mounting  
Torque  
Nm  
(㎏fB)  
Mass  
g
Electrical Characteristics  
Symbol  
IRRM  
Item  
Conditions  
Ratings  
15  
Unit  
mA  
V
Repetitive Peak Reverse Current, max.  
Forward Voltage Drop, max.  
Thermal Impedance, max.  
DRM  
at V , single phase, half wave. Tj125℃  
Forward current 120ATj25Inst. measurement  
Junction to case  
VFM  
1.40  
0.55  
Rthj-c)  
/W  
SanRex  
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

与KD40F120相关器件

型号 品牌 获取价格 描述 数据表
KD40F160 SANREX

获取价格

DIODE MODULE
KD40F40 SANREX

获取价格

DIODE MODULE
KD40F60 SANREX

获取价格

Rectifier Diode,
KD40F80 SANREX

获取价格

DIODE MODULE
KD421210 POWEREX

获取价格

Power Bipolar Transistor, 100A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epox
KD421210A7 POWEREX

获取价格

Dual Darlington Transistor Module (100 Amperes/1200 Volts)
KD421210HB POWEREX

获取价格

Power Bipolar Transistor, 100A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epox
KD421215 POWEREX

获取价格

Power Bipolar Transistor, 150A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epox
KD421215A7 POWEREX

获取价格

Power Bipolar Transistor, 150A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, MODULE-15
KD421215HB POWEREX

获取价格

Power Bipolar Transistor, 150A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epox