KBU810

更新时间： 2024-11-05 22:47:39

品牌	Logo	应用领域
WTE		整流二极管桥式整流二极管
页数	文件大小	规格书
3页	45K
描述
8.0A BRIDGE RECTIFIER

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中文翻译

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数据手册

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KBU810 数据手册

WTE

PO WER SEM ICONDUCTORS

KBU800 – KBU810

8.0A BRIDGE RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

UL Recognized File # E157705

KBU

Min

Dim

Max

23.70

4.10

4.70

2.20

11.30

6.80

5.60

—

22.70

3.80

4.20

1.70

10.30

4.50

4.60

25.40

—

Mechanical Data

Case: Molded Plastic

19.30

17.80

7.10

5.20

1.30

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 8.0 grams (approx.)

Mounting Position: Any

16.80

6.60

4.70

1.20

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBU

800

KBU

801

KBU

802

KBU

804

KBU

806

KBU

808

KBU

810

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

8.0

Average Rectified Output Current

@T_C= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

300

Forward Voltage (per element)

@I_F= 4.0A

V^FM

I^R

1.0

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

1.0

µA

Rating for Fusing (t < 8.3ms) (Note 1)

Typical Thermal Resistance (Note 2)

I²^t

373

7.5

A²s

K/W

°C

R^ꢀ^JC

T^j,T^STG

Operating and Storage Temperature Range

-65 to +150

Note: 1. Non-repetitive for t > 1ms and < 8.3ms.

2. Thermal resistance junction to case per element mounted on PC board with 13.0x13.0x0.03mm thick land areas.

KBU800 – KBU810

1 of 3

12 3

中文翻译

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