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KBU800 PDF预览

KBU800

更新时间: 2024-02-27 12:46:43
品牌 Logo 应用领域
WTE 整流二极管桥式整流二极管
页数 文件大小 规格书
3页 45K
描述
8.0A BRIDGE RECTIFIER

KBU800 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSFM-T4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
其他特性:UL RECOGNIZED, HIGH RELIABILITY最小击穿电压:50 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
湿度敏感等级:2最大非重复峰值正向电流:300 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
最大重复峰值反向电压:50 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBU800 数据手册

 浏览型号KBU800的Datasheet PDF文件第2页浏览型号KBU800的Datasheet PDF文件第3页 
WTE  
PO WER SEM ICONDUCTORS  
KBU800 – KBU810  
8.0A BRIDGE RECTIFIER  
Features  
!
Diffused Junction  
A
!
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
UL Recognized File # E157705  
B
C
KBU  
Min  
D
Dim  
A
B
C
D
E
Max  
23.70  
4.10  
4.70  
2.20  
11.30  
6.80  
5.60  
22.70  
3.80  
4.20  
1.70  
10.30  
4.50  
4.60  
25.40  
K
L
-
~
~
+
E
G
H
J
J
G
Mechanical Data  
!
!
Case: Molded Plastic  
H
K
L
19.30  
17.80  
7.10  
5.20  
1.30  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 8.0 grams (approx.)  
Mounting Position: Any  
M
N
16.80  
6.60  
4.70  
1.20  
M
N
P
!
!
!
!
All Dimensions in mm  
Marking: Type Number  
P
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBU  
800  
KBU  
801  
KBU  
802  
KBU  
804  
KBU  
806  
KBU  
808  
KBU  
810  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
8.0  
V
A
Average Rectified Output Current  
@TC = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
300  
A
Forward Voltage (per element)  
@IF = 4.0A  
VFM  
IR  
1.0  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
1.0  
µA  
mA  
Rating for Fusing (t < 8.3ms) (Note 1)  
Typical Thermal Resistance (Note 2)  
I2t  
373  
7.5  
A2s  
K/W  
°C  
RJC  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.  
2. Thermal resistance junction to case per element mounted on PC board with 13.0x13.0x0.03mm thick land areas.  
KBU800 – KBU810  
1 of 3  
© 2002 Won-Top Electronics  

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