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KBU8005 PDF预览

KBU8005

更新时间: 2024-01-13 17:56:19
品牌 Logo 应用领域
DIOTECH 二极管局域网
页数 文件大小 规格书
2页 727K
描述
SINGLE PHASE SILICON BRIDGE RECTIFIER

KBU8005 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.72
其他特性:UL RECOGNIZED最小击穿电压:50 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-W4
最大非重复峰值正向电流:200 A元件数量:4
相数:1端子数量:4
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:50 V表面贴装:NO
端子形式:WIRE端子位置:SINGLE
Base Number Matches:1

KBU8005 数据手册

 浏览型号KBU8005的Datasheet PDF文件第2页 
KBU8005 THRU KBU810  
SINGLE PHASE SILICON BRIDGE RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 8.0 Ampere  
FEATURES  
KBU  
.15 X23L  
Ideal for printed circuit board  
Surge overload rating: 300A peak  
High case dielectric strength  
High temperature soldering guaranteed:  
260°C/10 seconds at 5lbs. (2.3kg) tension  
.157(4.0)*45°  
(3.8 X5.7L)  
HOLE THRU  
.935(23.7)  
.895(22.7)  
300  
(7.5)  
.700(17.8)  
.600(16.8)  
.780(19.8)  
.740(18.8)  
1.00  
(25.4)  
MECHANICAL DATA  
MIN.  
Case: UL-94 Class V-0 recognized Flame Retardant Epoxy  
.052(1.3)DIA.  
.048(1.2)TYP.  
Terminals  
:
Plated leads solderable per  
MIL-STD 202, method 208  
.087(2.2)  
.071(1.8)  
.220(5.6)  
.180(4.6)  
Mounting Position: Any  
Marking: Type Number  
.276(7.0)  
.256(6.5)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
KBU  
8005  
KBU  
801  
KBU  
802  
KBU  
804  
KBU  
806  
KBU  
808  
KBU  
810  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
V
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
V
R
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
8.0  
V
A
Average Rectified Output Current  
@TC = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
FSM  
300  
1.0  
A
V
I
Forward Voltage (per element)  
@IF = 4.0A  
VFM  
IR  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
1.0  
µA  
mA  
Rating for Fusing (t < 8.3ms) (Note 1)  
Typical Thermal Resistance (Note 2)  
I2t  
373  
7.5  
2s  
A
R
JC  
K/W  
°C  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.  
2. Thermal resistance junction to case per element mounted on PC board with 13.0x13.0x0.03mm thick land areas.  

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