Datasheet > KBU6M/1

KBU6M/1

更新时间： 2024-02-09 22:16:55

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
2页	24K
描述
Bridge Rectifier Diode, 6A, 1000V V(RRM),

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技术参数
数据手册

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KBU6M/1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.9
配置：	BRIDGE, 4 ELEMENTS	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1 V	JESD-609代码：	e0
最大非重复峰值正向电流：	250 A	元件数量：	4
最高工作温度：	150 °C	最大输出电流：	6 A
最大重复峰值反向电压：	1000 V	子类别：	Bridge Rectifier Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

KBU6M/1 数据手册

KBU6A thru KBU6M

Vishay Semiconductors

formerly General Semiconductor

Single-Phase Bridge Rectifier

Reverse Voltage 50 and 1000 V

Forward Current 6.0 A

Case Style KBU

0.935 (23.7)

0.895 (22.7)

0.160 (4.1)

0.140 (3.6)

Features

0.185 (4.7)

0.165 (4.2)

• Plastic material used carries Underwriters Laboratory

Flammability Classification 94V-0

• This series is UL listed under the Recognized

Component Index, file number E54214

• High case dielectric strength of 1500 V_RMS

• Ideal for printed circuit boards

45^o

0.085 (2.2)

0.065 (1.7)

0.700

(17.8)

0.760

(19.3)

MAX.

0.660

(16.8)

0.075 (1.9) R. TYP.

(2 PLACES)

0.455 (11.3)

0.405 (10.3)

• High surge current capability

• High temperature soldering guaranteed:

250°C/10 seconds, 0.375 (9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0

(25.4)

MIN.

0.052 (1.3)

0.048 (1.2)

DIA.

Mechanical Data

0.220 (5.6)

0.180 (4.6)

Case: Molded plastic body

Terminals: Plated leads solderable per MIL-STD-750,

Method 2026

0.240 (6.09)

0.200 (5.08)

Dimensions in inches

and (millimeters)

Mounting Position: Any _{(NOTE 1)}

Weight: 0.3 oz., 8.0 g

0.280 (7.1)

0.260 (6.6)

Packaging codes/options:

0.205 (5.2)

0.185 (4.7)

1/250 EA. per Bulk Tray Stack

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

KBU

Symbols 6A

KBU

KBU KBU KBU

800

560

800

1000

700

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

Maximum DC blocking voltage

100

1000

Maximum average forward T_C=100°C ^{(1) (2)}

rectified output current at

6.0

I_F(AV)

T_A=40°C ⁽³⁾

Peak forward surge current single

sine-wave superimposed on rated load

(JEDEC Method) T_J=150°C

I_FSM

250

Typical thermal resistance per leg ⁽²⁾

R_ΘJA

R_ΘJC

8.6

3.1

°C/W

°C

Operating junction and storage temperature range T_J,T_STG

-50 to +150

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Maximum instantaneous forward drop per leg

at 6.0 A

V_F

1.0

Maximum DC reverse current

at rated DC blocking voltage per leg T_A=125°C

T_A= 25°C

5.0

1.0

µA

I_R

Notes:

(1) Recommended mounted position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw

(2) Thermal resistance from junction to ambient with units in free air, P.C.B. mounted on 0.5 x 0.5” (12 x 12mm) copper pads, 0.375" (9.5mm) lead length

(3) Thermal resistance from junction to case with units mounted on a 2.6 x 1.4 x 0.06" thick (6.5 x 3.5 x.15cm) Al. Plate

Document Number 88657

17-Jul-02

www.vishay.com

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与KBU6M/1相关器件

型号	品牌	描述	获取价格	数据表
KBU6M/1-E4	VISHAY	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti	获取价格
KBU6M/51	VISHAY	Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon, PLASTIC, CASE KBU, 4 PIN	获取价格
KBU6M/51-E4	VISHAY	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti	获取价格
KBU6M/72-E4	VISHAY	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti	获取价格
KBU6M1	VISHAY	6A, 1000V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN	获取价格
KBU6M1-E4	VISHAY	DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Recti	获取价格

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