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KBPC808 PDF预览

KBPC808

更新时间: 2024-01-03 13:44:39
品牌 Logo 应用领域
CHENG-YI 二极管IOT局域网
页数 文件大小 规格书
2页 128K
描述
SINGLE-PHASE SILICON BRIDGE

KBPC808 技术参数

生命周期:Not Recommended包装说明:R-PUFM-W4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.65
其他特性:UL RECOGNIZED最小击穿电压:800 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PUFM-W4最大非重复峰值正向电流:150 A
元件数量:4相数:1
端子数量:4最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:800 V
表面贴装:NO端子形式:WIRE
端子位置:UPPERBase Number Matches:1

KBPC808 数据手册

 浏览型号KBPC808的Datasheet PDF文件第1页 
KBPC8 SERIES  
SSIINNGGLLEE--PPHHAASSEE SSIILLIICCOONN BBRRIIDDGGEE  
CCHHEENNGG--YYII  
ELECTRONIC  
RATING AND CHARACTERISTICS CURVES  
KBPC8 SERIES  
Fig.1 - MAXIMUM FORWARD SURGE CURRENT  
Fig.2 - DERATING CURVE FOR  
OUTPUT RECTIFIED CURRENT  
250  
10  
200  
8
HEAT-SINK  
MOUNTING T  
C
150  
6
100  
4
2
50  
0
0
50  
100  
150  
1
10  
100  
0
TEMPERATURE,  
C
NUMBER OF CYCLES AT 60 Hz  
Fig.3 - TYPICAL FORWARD  
CHARACTERISTICS  
Fig.4 - TYPICAL REVERSE  
CHARACTERISTICS  
100  
10  
10  
1.0  
1.0  
0.1  
.1  
.01  
0
20  
40  
60  
80  
100  
120  
140  
.01  
PERCENT OF RATED PEAK  
REVERSE VOLTAGE  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  

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