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KBPC808S-LF PDF预览

KBPC808S-LF

更新时间: 2024-11-12 13:09:07
品牌 Logo 应用领域
WTE 整流二极管桥式整流二极管IOT局域网
页数 文件大小 规格书
3页 35K
描述
Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBPC-6, 4 PIN

KBPC808S-LF 数据手册

 浏览型号KBPC808S-LF的Datasheet PDF文件第2页浏览型号KBPC808S-LF的Datasheet PDF文件第3页 
WTE  
PO WER SEM ICONDUCTORS  
KBPC800 – KBPC810  
8.0A BRIDGE RECTIFIER  
Features  
!
!
!
!
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Diffused Junction  
High Current Capability  
High Case Dielectric Strength  
High Surge Current Capability  
Ideal for Printed Circuit Board Application  
Plastic Material has Underwriters Laboratory  
Flammability Classification 94V-O  
UL Recognized File # E157705  
H
J
G
+
~
-
KBPC-8  
Min  
Dim  
A
Max  
19.56  
7.60  
E
A
18.54  
6.35  
!
~
B
C
19.00  
D
1.27 Ø Typical  
5.33 7.37  
Hole for #6 screw  
E
E
Mechanical Data  
G
!
!
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
D
C
3.60  
4.00  
H
J
12.20  
13.20  
2.38 x 45°C Typical  
All Dimensions in mm  
!
!
!
!
!
Polarity: Marked on Body  
Weight: 5.4 grams (approx.)  
Mounting Position: Through Hole for #6 Screw  
Mounting Torque: 5.0 Inch-pounds Maximum  
Marking: Type Number  
B
A
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBPC KPBC KBPC KBPC KBPC KBPC KBPC  
Characteristic  
Symbol  
Unit  
800  
801  
100  
70  
802  
200  
140  
804  
806  
600  
420  
808  
800  
560  
810  
1000  
700  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
400  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
280  
8.0  
V
A
Average Rectified Output Current (Note 1) @TC = 50°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
125  
1.1  
A
V
Forward Voltage (per element)  
@IF = 4.0A  
VFM  
IR  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
1.0  
µA  
mA  
I2t Rating for Fusing (t<8.3ms) (Note 2)  
Typical Junction Capacitance (Note 3)  
Typical Thermal Resistance (Note 4)  
I2t  
Cj  
64  
100  
A2s  
pF  
RJC  
Tj, TSTG  
9.4  
K/W  
°C  
Operating and Storage Temperature Range  
-65 to +125  
Note: 1. Mounted on metal chassis.  
2. Non-repetitive, for t > 1ms and < 8.3ms.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
4. Thermal resistance junction to case per element.  
KBPC800 – KBPC810  
1 of 3  
© 2002 Won-Top Electronics  

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