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KBPC808S

更新时间： 2024-11-13 14:52:27
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 40K
描述
Square Type

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中文翻译

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KBPC808S 技术参数

生命周期：Not Recommended包装说明：R-PUFM-W4
针数：4Reach Compliance Code：compliant
HTS代码：8541.10.00.80风险等级：5.83
其他特性：UL RECOGNIZED最小击穿电压：800 V
外壳连接：ISOLATED配置：BRIDGE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：BRIDGE RECTIFIER DIODE
JESD-30 代码：R-PUFM-W4最大非重复峰值正向电流：150 A
元件数量：4相数：1
端子数量：4最高工作温度：125 °C
最低工作温度：-65 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT最大重复峰值反向电压：800 V
表面贴装：NO端子形式：WIRE
端子位置：UPPER

KBPC808S 数据手册

 浏览型号KBPC808S的Datasheet PDF文件第2页浏览型号KBPC808S的Datasheet PDF文件第3页浏览型号KBPC808S的Datasheet PDF文件第4页 
®
KBPC800S – KBPC810S  
8.0A SINGLE PHASE BRIDGE RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Diffused Junction  
High Current Capability  
H
High Case Dielectric Strength  
High Surge Current Capability  
Ideal for Printed Circuit Board Application  
Plastic Material has UL Flammability 94V-0  
Recognized File # E157705  
G
KBPC-6  
+
~
-
Dim  
A
Min  
14.70  
5.80  
Max  
15.75  
6.90  
—
E
A
~
B
C
15.00  
D
1.00 Ø Typical  
1.70 2.72  
Hole for #6 screw  
E
Mechanical Data  
Case: KBPC-6, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Marked on Body  
Weight: 3.8 grams (approx.)  
Mounting Position: Through Hole for #6 Screw  
Mounting Torque: 0.8 N.m Max.  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
C
B
G
3.60 Ø  
10.30  
4.00 Ø  
11.30  
H
All Dimensions in mm  
A
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
KBPC KBPC KBPC KBPC KBPC KBPC KBPC  
800S 801S 802S 804S 806S 808S 810S  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
8.0  
V
A
Average Rectified Output Current (Note 1) @TC = 50°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
150  
1.1  
A
Forward Voltage per leg  
@IF = 4.0A  
VFM  
IRM  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
500  
µA  
At Rated DC Blocking Voltage  
@TA = 125°C  
I2t Rating for Fusing (t < 8.3ms)  
I2t  
127  
A2s  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
186  
90  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Case (Note 1)  
RθJA  
RθJC  
22  
7.3  
°C/W  
RMS Isolation Voltage Terminals to Case, t = 1min  
Operating and Storage Temperature Range  
VISO  
1500  
V
TJ, TSTG  
-55 to +150  
°C  
Note: 1. Mounted on 150 x 150 x 3.0mm thick Al. heatsink.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Mounted on PCB with 12 x 12mm copper pads and measured at lead length 9.5mm from case.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1
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中文翻译

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