KBPC806G

更新时间： 2024-11-11 22:55:39

品牌	Logo	应用领域
WTE		整流二极管桥式整流二极管局域网
页数	文件大小	规格书
3页	36K
描述
8.0A GLASS PASSIVATED BRIDGE RECTIFIER

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中文翻译

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数据手册

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KBPC806G 数据手册

WTE

PO WER SEM ICONDUCTORS

KBPC800G – KBPC810G

8.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Current Capability

High Case Dielectric Strength

High Surge Current Capability

Ideal for Printed Circuit Board Application

Plastic Material has Underwriters Laboratory

Flammability Classification 94V-O

KBPC-8

Min

Dim

Max

19.56

7.60

—

18.54

6.35

19.00

1.27 Ø Typical

5.33 7.37

Hole for #6 screw

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

3.60

4.00

12.20

13.20

2.38 x 45°C Typical

All Dimensions in mm

Polarity: Marked on Body

Weight: 5.4 grams (approx.)

Mounting Position: Through Hole for #6 Screw

Mounting Torque: 5.0 Inch-pounds Maximum

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBPC KPBC KBPC KBPC KBPC KBPC KBPC

800G 801G 802G 804G 806G 808G 810G

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

8.0

Average Rectified Output Current (Note 1) @T_A= 50°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

160

1.1

Forward Voltage (per element)

@I_F= 4.0A

V^FM

I^R

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 125°C

5.0

500

µA

I²t Rating for Fusing (t<8.3ms) (Note 2)

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance (Note 4)

I²^t

C^j

160

200

A²s

R^ꢀ^JC

T^j, T^STG

6.0

K/W

°C

Operating and Storage Temperature Range

-55 to +150

Note: 1. Mounted on 8.6" sq. x 0.24" thick Al. plate.

2. Non-repetitive, for t > 1ms and < 8.3ms.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

4. Thermal resistance junction to case per element.

KBPC800G – KBPC810G

1 of 3

12 3

中文翻译

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与KBPC806G相关器件

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KBPC806PBF	INFINEON	获取价格	Bridge Rectifier Diode, 1 Phase, 8A, 600V V(RRM), Silicon
KBPC806PT	CHENMKO	获取价格	SILICON BRIDGE RECTIFIER
KBPC806S	WTE	获取价格	8.0A SINGLE-PHASE BRIDGE RECTIFIER
KBPC806S	WON-TOP	获取价格	Square Type
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KBPC806SG	WON-TOP	获取价格	Square Type
KBPC806SG-LF	WTE	获取价格	Rectifier Diode,