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KBP04ME4 PDF预览

KBP04ME4

更新时间: 2024-01-17 21:28:00
品牌 Logo 应用领域
固锝 - GOOD-ARK /
页数 文件大小 规格书
2页 140K
描述
Bridge Rectifier Diode, 1 Phase, 1.5A, 400V V(RRM), Silicon,

KBP04ME4 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSIP-W4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.34最小击穿电压:400 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
最大重复峰值反向电压:400 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:SINGLEBase Number Matches:1

KBP04ME4 数据手册

 浏览型号KBP04ME4的Datasheet PDF文件第2页 
KBP005M thru KBP10M  
Glass Passivated Single-Phase Bridge Rectifiers  
Reverse Voltage 50 to 1000 Volts Forward Current 1.5 Amperes  
Features  
Ideal for printed circuit board  
High surge current capability  
High case dielectric strength  
Solder Dip 260 °C, 40 seconds  
Mechanical Data  
Case: KBPM  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Silver plated (E4 Suffix) leads, solderable per  
J-STD-002B and JESD22-B102D  
Polarity: As marked on body  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rectification for  
Switching Power Supply, Home Appliances, Office Equipment, and  
Telecommunication applicationsy  
Package outline dimensions in inches (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25oC ambient temperature unless otherwise specified.  
KBP005M  
KBP01M  
KBP02M  
KBP04M  
KBP06M  
KBP08M  
KBP10M  
Parameter  
Symbols  
Units  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified output current  
at TA=40oC  
IF(AV)  
1.5  
Amps  
Peak forward surge current, 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
50.0  
30.0  
IFSM  
I2t  
Amps  
A2sec  
Volts  
Rating for fusing (t < 8.3ms)  
10  
1.0 (at 1.0A)  
1.3 (at 1.57A)  
Max. instantaneous forward voltage drop per element  
VF  
Maximum DC reverse current  
TA=25oC  
5.0  
500  
uA  
pF  
IR  
at rated DC blocking voltage per element TA=125oC  
Typical junction capacitance per element at 4.0V, 1MHz  
CJ  
15  
RθJA  
RθJL  
40  
13  
Typical thermal resistance per leg (Note 1)  
oC/W  
oC  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Notes:  
1. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12 mm) copper pads.  
* JEDEC registered values  
434  

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