Datasheet > KBJ4K

KBJ4K

更新时间： 2024-01-24 09:39:10

品牌	Logo	应用领域
DAESAN		二极管
页数	文件大小	规格书
2页	240K
描述
CURRENT 4.0 Amperes VOLTAGE 50 to 1000 Volts

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技术参数
数据手册

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KBJ4K 技术参数

生命周期：	Active	包装说明：	R-PSFM-T4
Reach Compliance Code：	compliant	风险等级：	5.57
最小击穿电压：	1000 V	外壳连接：	ISOLATED
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	R-PSFM-T4
最大非重复峰值正向电流：	150 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	2.3 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
最大重复峰值反向电压：	1000 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
Base Number Matches：	1

KBJ4K 数据手册

CURRENT 4.0 Amperes

VOLTAGE 50 to 1000 Volts

KBJ4A THRU KBJ4M

Features

· Glass Passivated Die Construction

· High Case Dielectric Strength of 1500VRMS

· Low Reverse Leakage Current

· Surge Overload Rating to 120A Peak

· Ideal for Printed Circuit Board Applications

· Plastic Material - UL Flammability Classification 94V-0

Mechanical Data

K B J

Dim

Min

Max

Dim

Min

3.30

1.50

Max

· Case : Molded Plastic

· Terminals : Plated Leads, Solderable per

MIL-STD-202, Method 208

24.80

14.70

25.20

15.30

3.70

1.90

4.00 Nominal

9.30

2.50

3.40

4.40

0.60

9.70

2.90

3.80

4.80

0.80

17.20

0.90

7.30

17.80

1.10

7.70

· Polarity : Molded on Body

· Mounting : Through Hole for #6 Screw

· Mounting Torque : 5.0 in-Ibs Maximum

· Approx. Weight : 4.6 grams

3.40

3.10

All Dimens ions in mm

· Marking : Type Number

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

KBJ

Symbols

Units

Peak Repetitive Reverse voltage

Working Peak Reverse voltage

DC Blocking voltage

RMM

RWM

100

200

140

400

600

420

800

560

1000

700

Volts

RMS Reverse voltage

R(RMS)

280

4.0

Volts

Average Rectified Output Current @ T

=115

Amps

℃

Non-Repetitive Peak Forward Surge Current,

8.3ms single half-sine-wave superimposed

on rated load (JEDEC method)

FSM

120

Amps

1.0

Volts

Forward voltage per element

@ IF=2.0 A

@ T

=25℃

5.0

Peak Reverse Current at Rated

DC Blocking voltage

μA

@ T

=125℃

500

Typical Junction Capacitance

per element (Note 1)

Typical Thermal Resistance (Note 2)

5.5

℃/W

RθJA

STG

Operating and Storage Temperature Range

-65 to +150

℃

Notes:

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

(2) Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.

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