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KBJ4M PDF预览

KBJ4M

更新时间: 2024-01-15 07:56:05
品牌 Logo 应用领域
WTE 整流二极管桥式整流二极管
页数 文件大小 规格书
3页 52K
描述
4.0A BRIDGE RECTIFIER

KBJ4M 技术参数

生命周期:Active包装说明:R-PSFM-T4
Reach Compliance Code:compliant风险等级:5.57
最小击穿电压:1000 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2.3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

KBJ4M 数据手册

 浏览型号KBJ4M的Datasheet PDF文件第2页浏览型号KBJ4M的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
KBJ4A – KBJ4M  
4.0A BRIDGE RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
A
L
G
KBJ-4  
Dim  
A
B
C
D
E
Min  
24.7  
14.7  
Max  
25.3  
15.3  
4.0  
B
C
+
~
~
-
H
J
D
17.0  
3.3  
18.0  
3.7  
K
E
G
H
J
3.1Ø  
1.05  
1.7  
3.4Ø  
1.45  
2.1  
Mechanical Data  
P
P
P
!
!
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 4.0 grams (approx.)  
Mounting Position: Any  
M
K
L
0.9  
1.1  
N
1.5  
1.9  
!
!
!
!
M
N
P
4.8  
5.16  
4.4  
3.8  
R
S
7.3  
7.7  
Marking: Type Number  
G
R
S
9.3  
9.7  
3.4  
3.9  
T
0.6  
0.8  
All Dimensions in mm  
T
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol KBJ4A KBJ4B KBJ4D KBJ4G KBJ4J KBJ4K KBJ4M Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
280  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current @TC = 100°C  
@TA = 25°C  
4.0  
2.4  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
I
FSM  
150  
A
I2t Rating for Fusing (t < 8.35ms)  
I2t  
93  
A2s  
V
Forward Voltage (per diode)  
@IF = 2.0A  
VFM  
IR  
1.0  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TC = 100°C  
5.0  
500  
µA  
Typical Thermal Resistance (per leg) (Note 1)  
Typical Thermal Resistance (per leg) (Note 2)  
Operating and Storage Temperature Range  
RJA  
RJC  
30  
5.5  
K/W  
K/W  
°C  
Tj, TSTG  
-55 to +150  
Note: 1. Thermal resistance junction to ambient, mounted on PCB at 9.5mm lead length.  
2. Thermal resistance junction to case, mounted on 5.0 x 4.0 x 0.8cm thick AL plate heatsink.  
KBJ4A – KBJ4M  
1 of 3  
© 2002 Won-Top Electronics  

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