Datasheet > KBJ4D

KBJ4D

更新时间： 2024-11-24 12:26:47

品牌	Logo	应用领域
KISEMICONDUCTOR		二极管
页数	文件大小	规格书
2页	1602K
描述
4 Amp GLASS PASS IVATED BRIDGE R ECTIFIE RS 50 to 1000 Volts

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中文翻译

获取价格

数据手册

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KBJ4D 数据手册

KBJ4A

THRU

KBJ4M

KI SEMICONDUCTOR

4 Amp

Features

•

Diffused Junction

GLASS PASSIVATED

BRIDGE RECTIFIERS

50 to 1000 Volts

Low Forward Voltage Drop

High Current Capability

UL Recognized File # E165989

KBJ

Maximum Ratings

Operating Junction Temperature: -55°C to + 150 °C

Storage Temperature: -55°C to +150°C

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum Maximum

Catalog

Number

RMS

Voltage

Blocking

Voltage

K BJ4005

KBJ401

KB J 402

KBJ404

KBJ406

KBJ408

KBJ410

KBJ4A

KBJ4B

KBJ4D

KBJ4G

KBJ4J

KBJ4K

KBJ4M

35V

70V

50V

100V

200V

400V

600V

800V

1000V

140V

280V

420V

560V

700V

DIMENSIONS

INCHES

MIN MAX

.992

Electrical Characteristics @ 25 °C Unless Otherwise Specified

DIM

MIN

24.80

14.70

MAX

25.20

15.30

NOTE

.976

.579

Average Forward

Current

I_F(AV)

4.0A

T_C= 100°C

.602

.154

.173

.161

.189

3.90

4.40

3.40

3.10

3.30

0.90

4.10

4.80

3.80

3.40

3.70

1.10

Peak Forward Surge

Current

I_FSM

150A

8.3ms, half sine

.134

.122

.150

.134

.130

.035

.146

.043

Maximum Forward

Voltage Drop Per

Element

V_F

1.0V

I_FM= 2.0A per

element;

.059

.677

.287

.075

.700

.303

1.50

17.20

7.30

2.50

0.60

1.90

17.80

7.70

2.90

0.80

T_A= 25°C*

.098

.024

.114

.031

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.366

.381

9.30

9.70

.118X45

3.0X45

I_R

10mA T^A= 25°C

.122

.134

3.10

3.40

500mA

T_C= 100°C

I²t Rating for fusing

I²t

93A ²S

(t<8.35ms)

KI SEMICONDUCTOR

中文翻译

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KBJ4G	BL Galaxy Electrical	获取价格	SILICON BRIDGE RECTIFIERS
KBJ4G	KISEMICONDUCTOR	获取价格	4 Amp GLASS PASS IVATED BRIDGE R ECTIFIE RS 50 to 1000 Volts
KBJ4G	LGE	获取价格	Silicon Bridge Rectifiers
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