Datasheet > KBJ4GV-G

KBJ4GV-G

更新时间： 2024-02-19 08:15:52

品牌	Logo	应用领域
SENSITRON		局域网二极管
页数	文件大小	规格书
3页	295K
描述
Bridge Rectifier Diode, 1 Phase, 2.3A, 400V V(RRM), Silicon, PLASTIC, CASE KBJ (3S), 4 PIN

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技术参数
数据手册

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KBJ4GV-G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	R-PSFM-T4
针数：	4	Reach Compliance Code：	compliant
HTS代码：	8541.10.00.80	风险等级：	5.2
其他特性：	UL RECOGNIZED	外壳连接：	ISOLATED
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	R-PSFM-T4
最大非重复峰值正向电流：	150 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	2.3 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最大重复峰值反向电压：	400 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

KBJ4GV-G 数据手册

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SENSITRON

KBJ4AV – KBJ4MV

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SEMICONDUCTOR

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4.0A BRIDGE RECTIFIER

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Data Sheet 1383, Rev. —

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Features

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Plastic package has Underwriters Laboratory

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Flammability Classification 94V-0

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High case dielectric strength of 2000 V

Ideal for printed circuit boards

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Case Style: KBJ (3S)

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Glass passivated chip junction

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Ultra surge current capability

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Mechanical Data

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Case: KBJ(3S) Molded plastic body

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Mounting Position: Any⁽³⁾

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Mounting Torque: 5 in. – lb. Max.

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Weight: 0.15oz., 4.3g

Terminals: Plated Leads Solderable per

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)

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MIL-STD-750, Method 2026

High temperature soldering guaranteed:

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260°C/10 seconds,0.375(9.5mm) lead length,

5lbs.(2.3kg) tension

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Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol KBJ4AV KBJ4BV KBJ4DV KBJ4GV KBJ4JV KBJ4KV KBJ4MV Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

200

140

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current @T_C= 100°C

@T_A= 25°C

4.0⁽¹⁾

2.3⁽²⁾

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

150

I²t Rating for Fusing (t < 8.3ms)

I²t

A²s

Forward Voltage (per diode)

@I_F= 2.0A

VFM

1.00

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_C= 125°C

5.0

250

µA

Typical Thermal Resistance (per leg) (Note 1)

Typical Thermal Resistance (per leg) (Note 2)

Dielectric strength(Terminals to case, AC 1 minute)

Operating and Storage Temperature Range

RθJA

RθJC

Vdis

26⁽²⁾

5⁽¹⁾

K/W

2000

Tj, TSTG

-55 to +150

°C

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与KBJ4GV-G相关器件

型号	品牌	获取价格	描述	数据表
KBJ4J	DAESAN	获取价格	CURRENT 4.0 Amperes VOLTAGE 50 to 1000 Volts
KBJ4J	BL Galaxy Electrical	获取价格	SILICON BRIDGE RECTIFIERS
KBJ4J	LGE	获取价格	Silicon Bridge Rectifiers
KBJ4J	KISEMICONDUCTOR	获取价格	4 Amp GLASS PASS IVATED BRIDGE R ECTIFIE RS 50 to 1000 Volts
KBJ4J	KEC	获取价格	KBJ(3S) PACKAGE
KBJ4J	DACHANG	获取价格	Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 1000V Forward Current 4 A
KBJ4J	WTE	获取价格	4.0A BRIDGE RECTIFIER
KBJ4J	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
KBJ4J	GOOD-ARK	获取价格
KBJ4J	BL Galaxy Electrical	获取价格	4A,600V, Bridge Rectifiers

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