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KBJ410GP PDF预览

KBJ410GP

更新时间: 2024-11-21 08:24:51
品牌 Logo 应用领域
美微科 - MCC 整流二极管桥式整流二极管
页数 文件大小 规格书
3页 744K
描述
DIODE 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBJ, 4 PIN, Bridge Rectifier Diode

KBJ410GP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC, KBJ, 4 PIN
针数:4Reach Compliance Code:unknown
风险等级:5.31Base Number Matches:1

KBJ410GP 数据手册

 浏览型号KBJ410GP的Datasheet PDF文件第2页浏览型号KBJ410GP的Datasheet PDF文件第3页 
KBJ4005G  
THRU  
KBJ410G  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
4 Amp  
Features  
·
·
·
Diffused Junction  
GLASS PASSIVATED  
BRIDGE RECTIFIERS  
50 to 1000 Volts  
Low Forward Voltage Drop  
High Current Capability  
UL Recognized File # E165989  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
KBJ  
Maximum Ratings  
·
·
Operating Junction Temperature: -55°C to + 150 °C  
Storage Temperature: -55°C to +150°C  
P
D
A
E
O
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
Maximum Maximum  
F
B
RMS  
DC  
N
-
+
~
~
Voltage  
Blocking  
Voltage  
G
H
C
I
J
K BJ4005G KBJ4005G  
35V  
70V  
50V  
L
KBJ401G  
KB J 402G  
KBJ404G  
KBJ406G  
KBJ408G  
KBJ410G  
KBJ401G  
KBJ402G  
KBJ404G  
KBJ406G  
KBJ408G  
KBJ410G  
100V  
200V  
400V  
600V  
800V  
1000V  
K
140V  
280V  
420V  
560V  
700V  
M
800V  
1000V  
DIMENSIONS  
INCHES  
MIN MAX  
.992  
MM  
Electrical Characteristics @ 25 °C Unless Otherwise Specified  
DIM  
A
B
MIN  
24.80  
14.70  
MAX  
25.20  
15.30  
NOTE  
.976  
.579  
Average Forward  
Current  
IF(AV)  
4.0A  
TC = 100°C  
.602  
C
D
E
F
G
H
.154  
.173  
.161  
.189  
3.90  
4.40  
3.40  
3.10  
3.30  
0.90  
4.10  
4.80  
3.80  
3.40  
3.70  
1.10  
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
.134  
.122  
.150  
.134  
.130  
.035  
.146  
.043  
Maximum Forward  
Voltage Drop Per  
Element  
VF  
1.0V  
IFM = 2.0A per  
element;  
I
J
K
L
M
.059  
.677  
.287  
.075  
.700  
.303  
1.50  
17.20  
7.30  
2.50  
0.60  
1.90  
17.80  
7.70  
2.90  
0.80  
TA = 25°C*  
.098  
.024  
.114  
.031  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
N
O
P
.366  
.381  
9.30  
9.70  
.118X45  
3.0X45  
°
°
IR  
10mA TA = 25°C  
.122  
.134  
3.10  
3.40  
500mA  
TC = 100°C  
I2t Rating for fusing  
I2t  
93A 2S  
(t<8.3ms)  
www.mccsemi.com  
Revision: 2  
2006/05/21  
1 of 3  

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