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KBJ1001G-BP PDF预览

KBJ1001G-BP

更新时间: 2024-11-25 15:36:15
品牌 Logo 应用领域
美微科 - MCC 局域网二极管
页数 文件大小 规格书
3页 375K
描述
Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBJ, 4 PIN

KBJ1001G-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, KBJ, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.68其他特性:UL RECOGNIZED
最小击穿电压:100 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:120 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBJ1001G-BP 数据手册

 浏览型号KBJ1001G-BP的Datasheet PDF文件第2页浏览型号KBJ1001G-BP的Datasheet PDF文件第3页 
KBJ10005G  
THRU  
M C C  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
KBJ1010G  
Features  
10 Amp  
Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
Halogen free available upon request by adding suffix "-HF"  
Epoxy meets UL 94 V-0 flammability rating  
GLASS PASSIVATED  
BRIDGE RECTIFIERS  
50 to 1000 Volts  
Moisture Sensitivity Level 1  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
KBJ  
Maximum Ratings  
Operating Junction Temperature: -55°C to + 150°C  
Storage Temperature: -55°C to +150°C  
P
D
A
UL Recognized File # E165989  
E
O
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
DC  
F
B
RMS  
Voltage  
N
ˀ
ʾ
̑
̑
Blocking  
Voltage  
G
H
C
I
J
KBJ10005G KBJ10005G  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
L
KBJ1001G  
KBJ1002G  
KBJ1004G  
KBJ1006G  
KBJ1008G  
KBJ1010G  
KBJ1001G  
KBJ1002G  
KBJ1004G  
KBJ1006G  
KBJ1008G  
KBJ1010G  
100V  
200V  
K
140V  
280V  
420V  
560V  
700V  
M
400V  
600V  
800V  
1000V  
~
~
Case Type  
DIMENSIONS  
INCHES  
MIN MAX  
.992  
MM  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
10A  
DIM  
A
MIN  
24.80  
14.70  
MAX  
25.20  
15.30  
NOTE  
.976  
.579  
Average Forward  
Current  
IF(AV)  
TC = 100°C  
B
.602  
C
D
.154  
.173  
.161  
.189  
3.90  
4.40  
4.10  
4.80  
Peak Forward Surge  
Current  
IFSM  
120A  
8.3ms, half sine  
E
F
.134  
.122  
.150  
.134  
3.40  
3.10  
3.80  
3.40  
G
H
.130  
.035  
.146  
.043  
3.30  
0.90  
3.70  
1.10  
Maximum Forward  
Voltage Drop Per  
Element  
VF  
1.1V  
IFM = 5.0A per  
element;  
TA = 25°C (Note 2)  
I
J
.059  
.677  
.287  
.075  
.700  
.303  
1.50  
17.20  
7.30  
1.90  
17.80  
7.70  
K
L
M
.098  
.024  
.114  
.031  
2.50  
0.60  
2.90  
0.80  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
N
.366  
.381  
9.30  
9.70  
O
P
.118X45  
3.0X45  
°
3.10  
°
.134  
IR  
10µA  
TA = 25°C  
.122  
3.40  
I2t Rating for fusing  
I2t  
60A 2S  
(t<8.3ms)  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
2. Pulse Test: Pulse Width 300usec, Duty Cycle 1%  
www.mccsemi.com  
1 of 3  
Revision: A  
2013/01/01  

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