KAI-1010
1008 (H) x 1018 (V) Interline
CCD Image Sensor
Description
The KAI−1010 Image Sensor is a high-resolution monochrome
charge coupled device (CCD) device whose non-interlaced
architecture makes it ideally suited for video, electronic still and
motion/still camera applications. The device is built using an
advanced true two-phase, double-polysilicon, NMOS CCD
technology. The p+npn− photodetector elements eliminate image lag
and reduce image smear while providing antiblooming protection and
electronic-exposure control. The total chip size is 10.15 (H) mm ×
10.00 (V) mm
www.onsemi.com
Table 1. GENERAL SPECIFICATIONS
Parameter
Architecture
Typical Value
Interline CCD, Non-Interlaced
1024 (H) × 1024 (V)
1008 (H) × 1018 (V)
1008 (H) × 1018 (V)
1 or 2
Total Number of Pixels
Number of Effective Pixels
Number of Active Pixels
Number of Outputs
Pixel Size
Figure 1. KAI−1010 Interline
CCD Image Sensor
Features
• Front Illuminated Interline Architecture
• Progressive Scan (Non-Interlaced)
• Electronic Shutter
9 mm (H) × 9 mm (V)
Active Image Size
9.1 mm (H) × 9.2 mm (V)
12.9 mm (Diagonal)
1″ Optical Format
• On-Chip Dark Reference
• Low Dark Current
Optical Fill-Factor
Saturation Signal
Output Sensitivity
Dark Noise
60%
−
> 50,000 e
• High Sensitivity Output Structure
• Anti-Blooming Protection
• Negligible Lag
−
12 mV/e
−
50 e rms
2
• Low Smear (0.1% with Microlens)
Dark Current
< 0.5 nA/cm
Quantum Efficiency
(Wavelength = 500 nm)
37%
Application
• Machine Vision
Blooming Suppression
Maximum Data Rate
Image Lag
> 100 X
20 MHz/Channel (2 Channels)
Negligible
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Package
CERDIP
Cover Glass
AR Coated (Both Sides)
NOTE: All Parameters are specified at T = 40°C unless otherwise noted.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
May, 2015 − Rev. 2
KAI−1010/D