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KAI-1010-ABA-CR-AE PDF预览

KAI-1010-ABA-CR-AE

更新时间: 2024-11-20 01:09:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
27页 308K
描述
Interline CCD Image Sensor

KAI-1010-ABA-CR-AE 数据手册

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KAI-1010  
1008 (H) x 1018 (V) Interline  
CCD Image Sensor  
Description  
The KAI−1010 Image Sensor is a high-resolution monochrome  
charge coupled device (CCD) device whose non-interlaced  
architecture makes it ideally suited for video, electronic still and  
motion/still camera applications. The device is built using an  
advanced true two-phase, double-polysilicon, NMOS CCD  
technology. The p+npn− photodetector elements eliminate image lag  
and reduce image smear while providing antiblooming protection and  
electronic-exposure control. The total chip size is 10.15 (H) mm ×  
10.00 (V) mm  
www.onsemi.com  
Table 1. GENERAL SPECIFICATIONS  
Parameter  
Architecture  
Typical Value  
Interline CCD, Non-Interlaced  
1024 (H) × 1024 (V)  
1008 (H) × 1018 (V)  
1008 (H) × 1018 (V)  
1 or 2  
Total Number of Pixels  
Number of Effective Pixels  
Number of Active Pixels  
Number of Outputs  
Pixel Size  
Figure 1. KAI−1010 Interline  
CCD Image Sensor  
Features  
Front Illuminated Interline Architecture  
Progressive Scan (Non-Interlaced)  
Electronic Shutter  
9 mm (H) × 9 mm (V)  
Active Image Size  
9.1 mm (H) × 9.2 mm (V)  
12.9 mm (Diagonal)  
1Optical Format  
On-Chip Dark Reference  
Low Dark Current  
Optical Fill-Factor  
Saturation Signal  
Output Sensitivity  
Dark Noise  
60%  
> 50,000 e  
High Sensitivity Output Structure  
Anti-Blooming Protection  
Negligible Lag  
12 mV/e  
50 e rms  
2
Low Smear (0.1% with Microlens)  
Dark Current  
< 0.5 nA/cm  
Quantum Efficiency  
(Wavelength = 500 nm)  
37%  
Application  
Machine Vision  
Blooming Suppression  
Maximum Data Rate  
Image Lag  
> 100 X  
20 MHz/Channel (2 Channels)  
Negligible  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Package  
CERDIP  
Cover Glass  
AR Coated (Both Sides)  
NOTE: All Parameters are specified at T = 40°C unless otherwise noted.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
May, 2015 − Rev. 2  
KAI−1010/D  

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