是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最长访问时间: | 80 ns | 备用内存宽度: | 8 |
命令用户界面: | YES | 通用闪存接口: | YES |
数据轮询: | YES | JESD-30 代码: | R-PDSO-G56 |
JESD-609代码: | e6 | 内存密度: | 134217728 bit |
内存集成电路类型: | EEPROM CARD | 内存宽度: | 16 |
湿度敏感等级: | 1 | 部门数/规模: | 128 |
端子数量: | 56 | 字数: | 8388608 words |
字数代码: | 8000000 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 8MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP56,.8,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 页面大小: | 8/16 words |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
电源: | 1.8/3.3,3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 128K | 最大待机电流: | 0.00004 A |
子类别: | Flash Memories | 最大压摆率: | 0.055 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Bismuth (Sn97Bi3) |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
切换位: | YES | 类型: | NOR TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
K8P2815UQB-DC4B0 | SAMSUNG | Flash, 8MX16, 60ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-80/64 |
获取价格 |
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K8P2815UQB-DC4C0 | SAMSUNG | Flash, 8MX16, 65ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-80/64 |
获取价格 |
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K8P2815UQB-DE4A0 | SAMSUNG | Flash, 8MX16, 55ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-80/64 |
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K8P2815UQB-DE4B | SAMSUNG | Flash, 8MX16, 60ns, PBGA80 |
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K8P2815UQB-DE4B0 | SAMSUNG | Flash, 8MX16, 60ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-80/64 |
获取价格 |
|
K8P2815UQB-DE4C0 | SAMSUNG | Flash, 8MX16, 65ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-80/64 |
获取价格 |