是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA64,8X8,32 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最长访问时间: | 65 ns |
启动块: | BOTTOM/TOP | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | YES |
JESD-30 代码: | S-PBGA-B64 | 内存密度: | 134217728 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
湿度敏感等级: | 3 | 部门数/规模: | 16,254 |
端子数量: | 64 | 字数: | 8388608 words |
字数代码: | 8000000 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 8MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA64,8X8,32 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, FINE PITCH | 页面大小: | 8 words |
并行/串行: | PARALLEL | 电源: | 3/3.3 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 4K,32K | 最大待机电流: | 0.00003 A |
子类别: | Flash Memories | 最大压摆率: | 0.055 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
切换位: | YES | 类型: | NOR TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8P2815UQB-EI4D0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 70ns, PBGA64, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 | |
K8P2815UQB-EI4DT | SAMSUNG |
获取价格 |
Flash, 8MX16, 70ns, PBGA64 | |
K8P2815UQC | SAMSUNG |
获取价格 |
128Mb C-die NOR FLASH | |
K8P2815UQC-GC4B0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 65ns, PBGA80, 11 X 8 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-80 | |
K8P2815UQC-GC4D0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 70ns, PBGA80, 11 X 8 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-80 | |
K8P2815UQC-GE4C0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 65ns, PBGA80, 11 X 8 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-80 | |
K8P2815UQC-GE4CT | SAMSUNG |
获取价格 |
EEPROM Card, 8MX16, 65ns, Parallel, CMOS, PBGA80 | |
K8P2815UQC-GE4D0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 70ns, PBGA80, 11 X 8 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-80 | |
K8P2815UQC-GE4DT | SAMSUNG |
获取价格 |
EEPROM Card, 8MX16, 70ns, Parallel, CMOS, PBGA80 | |
K8P2815UQC-GI4B0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 65ns, PBGA80, 11 X 8 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-80 |