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K7N163601M-QC15 PDF预览

K7N163601M-QC15

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
20页 350K
描述
ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100

K7N163601M-QC15 数据手册

 浏览型号K7N163601M-QC15的Datasheet PDF文件第2页浏览型号K7N163601M-QC15的Datasheet PDF文件第3页浏览型号K7N163601M-QC15的Datasheet PDF文件第4页浏览型号K7N163601M-QC15的Datasheet PDF文件第5页浏览型号K7N163601M-QC15的Datasheet PDF文件第6页浏览型号K7N163601M-QC15的Datasheet PDF文件第7页 
K7N163601M  
K7N161801M  
512Kx36 & 1Mx18 Pipelined NtRAMTM  
Document Title  
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM  
Revision History  
Draft Date  
Dec. 22. 1998  
May. 27. 1999  
Sep. 04. 1999  
Rev. No.  
History  
Remark  
0.0  
0.1  
0.2  
1. Initial document.  
Preliminary  
Preliminary  
Preliminary  
1. Update ICC & ISB values.  
1. Change ISB value from 80mA to 110mA at -67.  
2. Change ISB value from 70mA to 90mA at -72 .  
3. Change ISB value from 60mA to 80mA at -10 .  
Nov. 19. 1999  
0.3  
1. Change pin allocation at 119BGA .  
- A4 ; from NC to A .  
Preliminary  
- B2 ; from A to CS2  
- B4 ; from CKE to ADV  
- B6 ; from A to CS2  
- G4 ; from ADV to A  
- H4 ; from NC to WE  
- M4 ; from WE toCKE  
2. Changed DC condition at Icc and parameters  
Icc ; from 420mA to 400mA at -67,  
from 370mA to 380mA at -75,  
from 300mA to 320mA at -10,  
Nov. 26. 1999  
Dec. 08. 1999  
Feb. 23. 2001  
0.4  
1.0  
2.0  
1. Add tCYC 167MHz.  
1. Final Spec Release.  
1. Remove 100MHz  
Preliminary  
Final  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
February 2001  
Rev 2.0  

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