Datasheet > K7N163601M-TC16

K7N163601M-TC16

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
20页	460K
描述
ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

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技术参数
数据手册

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K7N163601M-TC16 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
Base Number Matches：	1

K7N163601M-TC16 数据手册

K7N163601M

K7N161801M

512Kx36 & 1Mx18 Pipelined NtRAM^TM

Document Title

512Kx36 & 1Mx18-Bit Pipelined NtRAM^TM

Revision History

Draft Date

Rev. No.

History

Remark

Dec. 22. 1998

May. 27. 1999

Sep. 04. 1999

0.0

0.1

0.2

1. Initial document.

Preliminary

1. Update ICC & ISB values.

1. Change ISB value from 80mA to 110mA at -67.

2. Change ISB value from 70mA to 90mA at -72 .

3. Change ISB value from 60mA to 80mA at -10 .

Nov. 19. 1999

0.3

1. Change pin allocation at 119BGA .

- A4 ; from NC to A .

Preliminary

- B2 ; from A to CS2

- B4 ; from CKE to ADV

- B6 ; from A to CS2

- G4 ; from ADV to A

- H4 ; from NC to WE

- M4 ; from WE toCKE

2. Changed DC condition at Icc and parameters

Icc ; from 420mA to 400mA at -67,

from 370mA to 380mA at -75,

from 300mA to 320mA at -10,

Nov. 26. 1999

Dec. 08. 1999

0.4

1.0

1. Add tCYC 167MHz.

1. Final Spec Release.

Preliminary

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

December 1999

Rev 1.0

12 3 4 5 6 7...20

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