5秒后页面跳转
K7N163601M-PC16 PDF预览

K7N163601M-PC16

更新时间: 2024-09-22 05:23:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
20页 352K
描述
ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100

K7N163601M-PC16 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:QFP, QFP100,.63X.87Reach Compliance Code:compliant
风险等级:5.8最长访问时间:3.5 ns
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
内存密度:18874368 bit内存集成电路类型:ZBT SRAM
内存宽度:36端子数量:100
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL电源:2.5/3.3,3.3 V
认证状态:Not Qualified最大待机电流:0.03 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.42 mA表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.635 mm
端子位置:QUADBase Number Matches:1

K7N163601M-PC16 数据手册

 浏览型号K7N163601M-PC16的Datasheet PDF文件第2页浏览型号K7N163601M-PC16的Datasheet PDF文件第3页浏览型号K7N163601M-PC16的Datasheet PDF文件第4页浏览型号K7N163601M-PC16的Datasheet PDF文件第5页浏览型号K7N163601M-PC16的Datasheet PDF文件第6页浏览型号K7N163601M-PC16的Datasheet PDF文件第7页 
K7N163601M  
K7N161801M  
512Kx36 & 1Mx18 Pipelined NtRAMTM  
Document Title  
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM  
Revision History  
Draft Date  
Dec. 22. 1998  
May. 27. 1999  
Sep. 04. 1999  
Rev. No.  
History  
Remark  
0.0  
0.1  
0.2  
1. Initial document.  
Preliminary  
Preliminary  
Preliminary  
1. Update ICC & ISB values.  
1. Change ISB value from 80mA to 110mA at -67.  
2. Change ISB value from 70mA to 90mA at -72 .  
3. Change ISB value from 60mA to 80mA at -10 .  
Nov. 19. 1999  
0.3  
1. Change pin allocation at 119BGA .  
- A4 ; from NC to A .  
Preliminary  
- B2 ; from A to CS2  
- B4 ; from CKE to ADV  
- B6 ; from A to CS2  
- G4 ; from ADV to A  
- H4 ; from NC to WE  
- M4 ; from WE toCKE  
2. Changed DC condition at Icc and parameters  
Icc ; from 420mA to 400mA at -67,  
from 370mA to 380mA at -75,  
from 300mA to 320mA at -10,  
Nov. 26. 1999  
Dec. 08. 1999  
Feb. 23. 2001  
0.4  
1.0  
2.0  
1. Add tCYC 167MHz.  
1. Final Spec Release.  
1. Remove 100MHz  
Preliminary  
Final  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
February 2001  
Rev 2.0  

与K7N163601M-PC16相关器件

型号 品牌 获取价格 描述 数据表
K7N163601M-QC15 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100
K7N163601M-QC15T SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100
K7N163601M-QC16 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100
K7N163601M-TC13 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7N163601M-TC130 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 4.2ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
K7N163601M-TC15 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7N163601M-TC150 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
K7N163601M-TC16 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7N163601-QC13 SAMSUNG

获取价格

512Kx36 & 1Mx18-Bit Flow Through NtRAM
K7N163601-QC16 SAMSUNG

获取价格

512Kx36 & 1Mx18-Bit Flow Through NtRAM