5秒后页面跳转
K7M321825M-FC650 PDF预览

K7M321825M-FC650

更新时间: 2024-01-06 07:18:24
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
28页 314K
描述
ZBT SRAM, 2MX18, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

K7M321825M-FC650 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:LBGA,针数:165
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:6.5 ns
其他特性:FLOW-THROUGH ARCHITECTUREJESD-30 代码:R-PBGA-B165
长度:17 mm内存密度:37748736 bit
内存集成电路类型:ZBT SRAM内存宽度:18
功能数量:1端子数量:165
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX18
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
宽度:15 mmBase Number Matches:1

K7M321825M-FC650 数据手册

 浏览型号K7M321825M-FC650的Datasheet PDF文件第2页浏览型号K7M321825M-FC650的Datasheet PDF文件第3页浏览型号K7M321825M-FC650的Datasheet PDF文件第4页浏览型号K7M321825M-FC650的Datasheet PDF文件第5页浏览型号K7M321825M-FC650的Datasheet PDF文件第6页浏览型号K7M321825M-FC650的Datasheet PDF文件第7页 
K7M323625M  
K7M321825M  
1Mx36 & 2Mx18 Flow-Through NtRAMTM  
Document Title  
1Mx36 & 2Mx18-Bit Flow Through NtRAMTM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
0.3  
1. Initial document.  
May. 10. 2001  
Aug. 29. 2001  
Dec. 03. 2001  
Feb. 14. 2002  
Preliminary  
Preliminary  
Preliminary  
Preliminary  
1. Add 165FBGA package  
1. Update JTAG scan order  
1. Change pin out for 165FBGA  
- x18/x36 ; 11B => from A to NC  
, 2R ==> from NC to A  
0.4  
1. Insert pin at JTAG scan order of 165FBGA in connection with  
pin out change  
Apr. 20. 2002  
Preliminary  
- x18/x36 ; insert Pin ID of 2R to BIT number of 69  
0.5  
1.0  
1.1  
1. Add Icc, Isb, Isb1 and Isb2 values.  
1. Final datasheet release.  
May. 10. 2002  
Sep. 26. 2002  
Oct. 17. 2003  
Preliminary  
Final  
1. Change the Stand-by current (Isb)  
Final  
Before  
Isb - 65 : 100  
After  
140  
130  
130  
110  
100  
- 75 :  
- 85 :  
90  
80  
90  
80  
Isb1  
Isb2  
:
:
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
Oct. 2003  
Rev 1.1  

与K7M321825M-FC650相关器件

型号 品牌 描述 获取价格 数据表
K7M321825M-FC750 SAMSUNG ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

获取价格

K7M321825M-FC850 SAMSUNG ZBT SRAM, 2MX18, 8.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

获取价格

K7M321825M-HC650 SAMSUNG ZBT SRAM, 2MX18, 6.5ns, CMOS, PBGA119, BGA-119

获取价格

K7M321825M-HC75 SAMSUNG ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA119, BGA-119

获取价格

K7M321825M-HC750 SAMSUNG ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA119, BGA-119

获取价格

K7M321825M-HC850 SAMSUNG ZBT SRAM, 2MX18, 8.5ns, CMOS, PBGA119, BGA-119

获取价格