Datasheet > K7M321825M-HC650

K7M321825M-HC650

更新时间： 2024-01-09 23:24:01

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
28页	314K
描述
ZBT SRAM, 2MX18, 6.5ns, CMOS, PBGA119, BGA-119

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K7M321825M-HC650 数据手册

K7M323625M

K7M321825M

1Mx36 & 2Mx18 Flow-Through NtRAM^TM

Document Title

1Mx36 & 2Mx18-Bit Flow Through NtRAM^TM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

0.2

0.3

1. Initial document.

May. 10. 2001

Aug. 29. 2001

Dec. 03. 2001

Feb. 14. 2002

Preliminary

1. Add 165FBGA package

1. Update JTAG scan order

1. Change pin out for 165FBGA

- x18/x36 ; 11B => from A to NC

, 2R ==> from NC to A

0.4

1. Insert pin at JTAG scan order of 165FBGA in connection with

pin out change

Apr. 20. 2002

Preliminary

- x18/x36 ; insert Pin ID of 2R to BIT number of 69

0.5

1.0

1.1

1. Add Icc, Isb, Isb1 and Isb2 values.

1. Final datasheet release.

May. 10. 2002

Sep. 26. 2002

Oct. 17. 2003

Preliminary

Final

1. Change the Stand-by current (Isb)

Final

Before

Isb - 65 : 100

After

140

130

110

100

- 75 :

- 85 :

Isb1

Isb2

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

Oct. 2003

Rev 1.1

12 3 4 5 6 7...28

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