Datasheet > K7M161825M

K7M161825M

更新时间： 2024-10-02 03:47:11

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
20页	351K
描述
512Kx36 & 1Mx18 Flow-Through NtRAM-TM

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K7M161825M 数据手册

K7M163625M

K7M161825M

512Kx36 & 1Mx18 Flow-Through NtRAM^TM

Document Title

512Kx36 & 1Mx18-Bit Flow Through NtRAM^TM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

0.2

1. Initial document.

March. 25. 1999

May. 27. 1999

June. 22. 1999

Preliminary

1. Update ICC & ISB values.

1. Change tOE from 3.5ns to 4.0ns at -8 .

2. Change tOE from 3.5ns to 4.0ns at -9 .

3. Change tOE from 3.5ns to 4.0ns at -10 .

Sep. 04. 1999

Nov. 19. 1999

Preliminary

0.3

0.4

1. Change ISB value from 60mA to 80mA at -8.

2. Change ISB value from 50mA to 70mA at -9 .

3. Change ISB value from 40mA to 60mA at -10 .

1. Changed tCYC from 12ns to 10ns at -9 .

2. Changed DC condition at Icc and parameters

Icc ; from 300mA to 320mA at -8,

from 260mA to 300mA at -9,

from 240mA to 280mA at -10

3. Change pin allocation at 119BGA .

- A4 ; from NC to A .

- B2 ; from A to CS2

- B4 ; from CKE to ADV

- B6 ; from A to CS2

- G4 ; from ADV to A

- H4 ; from NC to WE

- M4 ; from WE toCKE

1.0

2.0

3.0

1. Final Spec Release.

Dec. 08. 1999

Nov. 23. 2000

Feb. 23. 2001

Final

Add access time 7.5ns bin.

1. Remove -10 bin ( tCD=10ns)

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

February 2001

Rev 3.0

12 3 4 5 6 7...20

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