5秒后页面跳转
K7M161825M-TC10 PDF预览

K7M161825M-TC10

更新时间: 2024-10-02 15:36:11
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
20页 456K
描述
ZBT SRAM, 1MX18, 10ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7M161825M-TC10 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.83
Base Number Matches:1

K7M161825M-TC10 数据手册

 浏览型号K7M161825M-TC10的Datasheet PDF文件第2页浏览型号K7M161825M-TC10的Datasheet PDF文件第3页浏览型号K7M161825M-TC10的Datasheet PDF文件第4页浏览型号K7M161825M-TC10的Datasheet PDF文件第5页浏览型号K7M161825M-TC10的Datasheet PDF文件第6页浏览型号K7M161825M-TC10的Datasheet PDF文件第7页 
K7M163625M  
K7M161825M  
512Kx36 & 1Mx18 Flow-Through NtRAMTM  
Document Title  
512Kx36 & 1Mx18-Bit Flow Through NtRAMTM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
1. Initial document.  
March. 25. 1999  
May. 27. 1999  
June. 22. 1999  
Preliminary  
Preliminary  
Preliminary  
1. Update ICC & ISB values.  
1. Change tOE from 3.5ns to 4.0ns at -8 .  
2. Change tOE from 3.5ns to 4.0ns at -9 .  
3. Change tOE from 3.5ns to 4.0ns at -10 .  
Sep. 04. 1999  
Nov. 19. 1999  
Preliminary  
Preliminary  
0.3  
0.4  
1. Change ISB value from 60mA to 80mA at -8.  
2. Change ISB value from 50mA to 70mA at -9 .  
3. Change ISB value from 40mA to 60mA at -10 .  
1. Changed tCYC from 12ns to 10ns at -9 .  
2. Changed DC condition at Icc and parameters  
Icc ; from 300mA to 320mA at -8,  
from 260mA to 300mA at -9,  
from 240mA to 280mA at -10  
3. Change pin allocation at 119BGA .  
- A4 ; from NC to A .  
- B2 ; from A to CS2  
- B4 ; from CKE to ADV  
- B6 ; from A to CS2  
- G4 ; from ADV to A  
- H4 ; from NC to WE  
- M4 ; from WE toCKE  
1.0  
1. Final Spec Release.  
Dec. 08. 1999  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
December 1999  
Rev 1.0  

与K7M161825M-TC10相关器件

型号 品牌 获取价格 描述 数据表
K7M161825M-TC85 SAMSUNG

获取价格

ZBT SRAM, 1MX18, 8.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7M161825M-TC90 SAMSUNG

获取价格

ZBT SRAM, 1MX18, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7M161835B SAMSUNG

获取价格

512Kx36 & 1Mx18 Flow-Through NtRAM
K7M161835B-PC65 SAMSUNG

获取价格

512Kx36 & 1Mx18 Flow-Through NtRAM
K7M161835B-PC650 SAMSUNG

获取价格

ZBT SRAM, 1MX18, 6.5ns, CMOS, PQFP100, 20 X 14 MM, LEAD FREE, TQFP-100
K7M161835B-PI65 SAMSUNG

获取价格

512Kx36 & 1Mx18 Flow-Through NtRAM
K7M161835B-PI650 SAMSUNG

获取价格

ZBT SRAM, 1MX18, 6.5ns, CMOS, PQFP100, 20 X 14 MM, LEAD FREE, TQFP-100
K7M161835B-QC65 SAMSUNG

获取价格

512Kx36 & 1Mx18 Pipelined NtRAM
K7M161835B-QC650 SAMSUNG

获取价格

ZBT SRAM, 1MX18, 6.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7M161835B-QCI65 SAMSUNG

获取价格

512Kx36 & 1Mx18 Pipelined NtRAM