Datasheet > K7B161825M-TC90

K7B161825M-TC90

更新时间： 2024-01-11 06:23:58

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
21页	572K
描述
Cache SRAM, 1MX18, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

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技术参数
数据手册

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K7B161825M-TC90 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
Base Number Matches：	1

K7B161825M-TC90 数据手册

K7B163625M

K7B161825M

512Kx36 & 1Mx18 Synchronous SRAM

Document Title

512Kx36 & 1Mx18-Bit Synchronous Burst SRAM

Revision History

Rev.No.

History

Draft Date

Remark

0.0

Initial draft

March. 17 . 1999

Preliminary

0.1

0.2

1. Update ICC & ISB values.

May. 27. 1999

June. 22. 1999

Preliminary

1. Change tOE from 3.5ns to 4.0ns at -8 .

2. Change tOE from 3.5ns to 4.0ns at -9 .

3. Change tOE from 3.5ns to 4.0ns at -10 .

0.3

1. Change ISB value from 130mA to 80mA at -8 .

2. Change ISB value from 120mA to 70mA at -9 .

3. Change ISB value from 120mA to 60mA at -10 .

Sep. 04. 1999

Preliminary

0.4

1.0

1. Change tCYC value from 12ns to 10ns at -9 .

1. Final Spec Release.

Oct. 28. 1999

Dec. 08. 1999

Preliminary

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

December 1999

- 1 -

Rev 1.0

12 3 4 5 6 7...21

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K7B161835B-QI75	SAMSUNG	获取价格	Standard SRAM, 1MX18, 7.5ns, CMOS, PQFP100
K7B163225A-QC65	SAMSUNG	获取价格	Cache SRAM, 512KX32, 6.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100