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K6X4008C1F-DF70 PDF预览

K6X4008C1F-DF70

更新时间: 2024-02-21 05:21:01
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 179K
描述
512Kx8 bit Low Power full CMOS Static RAM

K6X4008C1F-DF70 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP32,.6
针数:32Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.83Is Samacsys:N
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PDIP-T32长度:41.91 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V认证状态:Not Qualified
座面最大高度:5.08 mm最大待机电流:0.000012 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.03 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

K6X4008C1F-DF70 数据手册

 浏览型号K6X4008C1F-DF70的Datasheet PDF文件第2页浏览型号K6X4008C1F-DF70的Datasheet PDF文件第3页浏览型号K6X4008C1F-DF70的Datasheet PDF文件第4页浏览型号K6X4008C1F-DF70的Datasheet PDF文件第5页浏览型号K6X4008C1F-DF70的Datasheet PDF文件第6页浏览型号K6X4008C1F-DF70的Datasheet PDF文件第7页 
K6X4008C1F Family  
CMOS SRAM  
Document Title  
512Kx8 bit Low Power full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
July 30, 2002  
Preliminary  
0.1  
Revised  
- Added Commercial Product.  
November 30, 2002 Preliminary  
September 16, 2003 Final  
1.0  
Finalized  
- Added Lead Free 32-SOP-525 Product  
- Changed ICC from 10mA to 5mA  
- Changed ICC1 from 8mA to 7mA  
- Changed ICC2 from 40mA to 30mA  
- Changed ISB from 3mA to 0.4mA  
- Changed IDR(Commercial) from 15mA to 12mA  
- Changed IDR(industrial) from 20mA to 12mA  
- Changed IDR(Automotive) from 30mA to 25mA  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
1
September 2003  

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