Datasheet > K6R4016V1C-TP10T

K6R4016V1C-TP10T

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
11页	190K
描述
Standard SRAM, 256KX16, 10ns, CMOS, PDSO44

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K6R4016V1C-TP10T 数据手册

PRELIMPreliminaryPPPPPPPPPINARY

CMOS SRAM

K6R4016V1C-C/C-L, K6R4016V1C-I/C-P

Document Title

256Kx16 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 1.0

History

Draft Data

Remark

Initial release with Preliminary.

Feb. 12. 1999

Mar. 29. 1999

Preliminary

1.1 Removed Low power Version.

1.2 Removed Data Retention Characteristics.

1.3 Changed ISB1 to 20mA

Rev. 2.0

Rev. 3.0

Relax D.C parameters.

Aug. 19. 1999

Mar. 27. 2000

Preliminary

Item

180mA

175mA

170mA

Current

200mA

195mA

190mA

12ns

15ns

20ns

ICC

Final

3.1 Delete Preliminary

3.2 Update D.C parameters and 10ns part.

Current

ICC

200mA

195mA

190mA

Isb

Isb1

ICC

Isb

Isb1

10ns

12ns

15ns

20ns

160mA

150mA

140mA

130mA

70mA

20mA

60mA

10mA

Apr. 24. 2000

Sep. 24. 2001

Final

Add Low Power-Ver.

Delete 20ns speed bin

Rev. 4.0

Rev. 5.0

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 5.0

September 2001

- 1 -

12 3 4 5 6 7...11

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