Datasheet > K6R4016V1C-TP10T

K6R4016V1C-TP10T

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
11页	190K
描述
Standard SRAM, 256KX16, 10ns, CMOS, PDSO44

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K6R4016V1C-TP10T 数据手册

浏览型号K6R4016V1C-TP10T的Datasheet PDF文件第10页

PRELIMPreliminaryPPPPPPPPPINARY

CMOS SRAM

K6R4016V1C-C/C-L, K6R4016V1C-I/C-P

PACKAGE DIMENSIONS

Units : millimeter.

Top View

Bottom View

A1 INDEX MARK

0.50

#A1

B/2

Detail A

Side View

Min

Typ

0.75

9.00

3.75

9.00

5.25

0.35

1.05

0.80

0.25

Max

Notes.

8.90

9.10

1. Bump counts: 48(8row x 6column)

2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)

3. All tolerence are +/-0.050 unless

otherwise specified.

8.90

9.10

4. Typ : Typical

0.30

0.40

1.20

5. Y is coplanarity: 0.08(Max)

0.20

0.30

0.08

Rev 5.0

September 2001

- 11

1...8 9 1011

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