Datasheet > K6R4016V1D-JL10

K6R4016V1D-JL10

更新时间： 2023-01-02 23:51:47

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
12页	308K
描述
Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

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K6R4016V1D-JL10 数据手册

PRELIMPreliminaryPPPPPPPPPINARY

CMOS SRAM

K6R4016V1D

Document Title

256Kx16 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 0.1

Rev. 0.2

Rev. 0.3

History

Draft Data

Remark

Initial release with Preliminary.

Add Low Ver.

Aug. 20. 2001

Sep. 19. 2001

Sep. 28. 2001

Oct. 09. 2001

Preliminary

Package dimensions modify on page 11.

Change ICC , ISB, ISB1

Item

Current

80mA

65mA

55mA

45mA

100mA

85mA

75mA

65mA

20mA

1.2mA

8ns

110mA

90mA

80mA

70mA

130mA

115mA

100mA

85mA

30mA

0.5mA

10ns

12ns

15ns

8ns

10ns

12ns

15ns

ICC(Commercial)

ICC(Industrial)

ISB

ISB1(L-ver.)

Rev. 0.4

Rev. 1.0

1. Correct AC parameters : Read & Write Cycle

2. Change Data Retention Current :

from 0.45mA to 1.1mA when Vcc=3.0V

from 0.35mA to 0.9mA when Vcc=2.0V

3. Limit L-Ver. to 48 TBGA Package

Nov.23. 2001

Dec.18. 2001

Preliminary

1. Delete 12ns,15ns speed bin.

2. Change Icc for Industrial mode.

Final

Item

100mA

85mA

Current

90mA

75mA

8ns

10ns

ICC(Industrial)

Rev. 2.0

Rev. 2.1

1. Add tBA,tBLZ,tBHZ,tBW AC parematers.

1. Correct the Package dimensions(48-TBGA)

Feb. 14. 2002

Oct. 23. 2002

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 2.0

Oct. 2002

- 1 -

12 3 4 5 6 7...12

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