Datasheet > K6R1016V1B-JP12

K6R1016V1B-JP12

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	207K
描述
Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, PLASTIC, SOJ-44

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数据手册

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K6R1016V1B-JP12 数据手册

PRELIMINARY

Preliminary

PRELIMINARY

CMOS SRAM

K6R1016V1B-C/B-L, K6R1016V1B-I/B-P

Document Title

64Kx16 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.

Operated at Commercial and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 1.0

History

Draft Data

Remark

Initial release with Design Target.

Apr. 1st, 1997

Jun. 1st, 1997

Design Target

Preliminary

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Rev. 2.0

Release to Final Data Sheet.

Feb. 25th, 1998

Final

2.1. Delete Preliminary.

2.2. Add Capacitive load of the test environment in A.C test load.

2.3. Change D.C characteristics.

Previous spec.

(8/10/12ns part)

200/190/180mA

30mA

Changed spec.

(8/10/12ns part)

200/195/190mA

50mA

Items

ICC

ISB

Rev. 2.1

Aug. 4th, 1998

Final

Change Standby and Data Retention Current for L-ver.

Items

Previous spec.

Changed spec.

ISB

0.5mA

0.7mA

IDR at 3.0V

IDR at 2.0V

0.4mA

0.3mA

0.5mA

0.4mA

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 2.1

August 1998

- 1 -

12 3 4 5 6 7...9

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