Datasheet > K6R1016C1D-JECII10/12

K6R1016C1D-JECII10/12

更新时间： 2024-01-28 21:06:47

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
10页	185K
描述
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

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PRELIMINARY

for AT&T

K6R1008V1D

CMOS SRAM

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

History

Draft Data

Remark

Rev. 0.0

Rev. 0.1

Rev. 0.2

Initial document.

Speed bin modify

Current modify

May. 11. 2001

June. 18. 2001

September. 9. 2001

Preliminary

Rev. 1.0

1. Delete 12ns speed bin.

2. Change Icc for Industrial mode.

Item

December. 18. 2001

Final

100mA

85mA

Current

90mA

75mA

8ns

ICC(Industrial)

10ns

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Revision 1.0

December 2001

- 1 -

12 3 4 5 6 7...10

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