5秒后页面跳转
K6R1016C1D-KC100 PDF预览

K6R1016C1D-KC100

更新时间: 2024-09-29 05:39:43
品牌 Logo 应用领域
三星 - SAMSUNG ISM频段静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 302K
描述
Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, PLASTIC, SOJ-44

K6R1016C1D-KC100 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ,
针数:44Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.82最长访问时间:10 ns
JESD-30 代码:R-PDSO-J44JESD-609代码:e6
长度:25.58 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX16封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:3.76 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN BISMUTH
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mm

K6R1016C1D-KC100 数据手册

 浏览型号K6R1016C1D-KC100的Datasheet PDF文件第2页浏览型号K6R1016C1D-KC100的Datasheet PDF文件第3页浏览型号K6R1016C1D-KC100的Datasheet PDF文件第4页浏览型号K6R1016C1D-KC100的Datasheet PDF文件第5页浏览型号K6R1016C1D-KC100的Datasheet PDF文件第6页浏览型号K6R1016C1D-KC100的Datasheet PDF文件第7页 
PRELIMINARY  
CMOS SRAM  
K6R1016C1D  
Document Title  
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
History  
Draft Data  
Remark  
Rev. 0.0  
Rev. 0.1  
Rev. 0.2  
Rev. 0.3  
Initial release with Preliminary.  
Page 4, DC operation condition modify  
Current modify  
June. 8. 2001  
Preliminary  
Preliminary  
Preliminary  
Preliminary  
June. 16. 2001  
September. 9. 2001  
December. 18.2001  
1. Delete 15ns speed bin.  
2. Change Icc for Industrial mode.  
Item  
Previous  
85mA  
75mA  
Current  
75mA  
65mA  
10ns  
12ns  
ICC(Industrial)  
Rev. 1.0  
1. Final datasheet release.  
2. Correct read cycle timing diagram(2).  
June. 19. 2002  
July. 8. 2002  
July. 26, 2004  
Final  
Final  
Final  
Rev. 2.0  
Rev. 3.0  
1. Delete 12ns speed bin.  
1. Add the Lead Free Package type.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,  
please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev. 3.0  
July 2004  
- 1 -  

与K6R1016C1D-KC100相关器件

型号 品牌 获取价格 描述 数据表
K6R1016C1D-KI10 SAMSUNG

获取价格

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1D-TC10 SAMSUNG

获取价格

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1D-TI10 SAMSUNG

获取价格

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1D-TI100 SAMSUNG

获取价格

Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6R1016C1D-UC10 SAMSUNG

获取价格

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1D-UC100 SAMSUNG

获取价格

Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
K6R1016C1D-UI10 SAMSUNG

获取价格

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1B-JC8T SAMSUNG

获取价格

Standard SRAM, 64KX16, 8ns, CMOS, PDSO44
K6R1016V1B-JI10 SAMSUNG

获取价格

Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, PLASTIC, SOJ-44
K6R1016V1B-JI10T SAMSUNG

获取价格

Standard SRAM, 64KX16, 10ns, CMOS, PDSO44