Datasheet > K6R1016C1D-UC100

K6R1016C1D-UC100

更新时间： 2023-02-26 15:43:23

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
11页	302K
描述
Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44

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K6R1016C1D-UC100 数据手册

PRELIMINARY

CMOS SRAM

K6R1016C1D

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

History

Draft Data

Remark

Rev. 0.0

Rev. 0.1

Rev. 0.2

Rev. 0.3

Initial release with Preliminary.

Page 4, DC operation condition modify

Current modify

June. 8. 2001

Preliminary

June. 16. 2001

September. 9. 2001

December. 18.2001

1. Delete 15ns speed bin.

2. Change Icc for Industrial mode.

Item

85mA

75mA

Current

75mA

65mA

10ns

12ns

ICC(Industrial)

Rev. 1.0

1. Final datasheet release.

2. Correct read cycle timing diagram(2).

June. 19. 2002

July. 8. 2002

July. 26, 2004

Final

Rev. 2.0

Rev. 3.0

1. Delete 12ns speed bin.

1. Add the Lead Free Package type.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev. 3.0

July 2004

- 1 -

12 3 4 5 6 7...11

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