是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SOJ, SOJ32,.44 |
Reach Compliance Code: | unknown | 风险等级: | 5.31 |
最长访问时间: | 10 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-J32 | JESD-609代码: | e1 |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
端子数量: | 32 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOJ |
封装等效代码: | SOJ32,.44 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 电源: | 3.3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.005 A |
最小待机电流: | 3 V | 子类别: | SRAMs |
最大压摆率: | 0.075 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | TIN SILVER COPPER |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6R1008V1D-KI100 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, PLASTIC, SOJ-32 | |
K6R1008V1D-TC08 | SAMSUNG |
获取价格 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | |
K6R1008V1D-TC08/10 | SAMSUNG |
获取价格 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industria | |
K6R1008V1D-TC10 | SAMSUNG |
获取价格 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | |
K6R1008V1D-TC100 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | |
K6R1008V1D-TI08 | SAMSUNG |
获取价格 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | |
K6R1008V1D-TI08/10 | SAMSUNG |
获取价格 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industria | |
K6R1008V1D-TI10 | SAMSUNG |
获取价格 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | |
K6R1008V1D-TI100 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | |
K6R1008V1D-UC08 | SAMSUNG |
获取价格 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |