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K6R1008V1D-UC10 PDF预览

K6R1008V1D-UC10

更新时间: 2024-09-24 22:29:59
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 190K
描述
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

K6R1008V1D-UC10 数据手册

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PRELIMINARY  
PRELIMINARY  
K6R1004C1D  
CMOS SRAM  
Document Title  
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).  
Revision History  
Rev.No.  
History  
Draft Data  
Remark  
Rev. 0.0  
Rev. 0.1  
Rev. 0.2  
Initial release with Preliminary.  
Current modify  
June. 8. 2001  
September. 9. 2001  
December. 18. 2001  
Preliminary  
Preliminary  
Preliminary  
1. Delete 15ns speed bin.  
2. Change Icc for Industrial mode.  
Item  
Previous  
85mA  
75mA  
Current  
75mA  
65mA  
10ns  
ICC(Industrial)  
12ns  
Rev. 1.0  
1. Final datasheet release.  
2. Delete UB,LB releated AC characteristics and timing diagram.  
June. 19. 2002  
Final  
Rev. 2.0  
Rev. 3.0  
1. Delete 12ns speed bin.  
July. 8. 2002  
July. 26, 2004  
Final  
Final  
1. Add the Lead Free Package type.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev. 3.0  
July 2004  
- 1 -  

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