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K6F2008S2M-TC15 PDF预览

K6F2008S2M-TC15

更新时间: 2024-10-01 03:31:35
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 138K
描述
Standard SRAM, 256KX8, 150ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

K6F2008S2M-TC15 数据手册

 浏览型号K6F2008S2M-TC15的Datasheet PDF文件第2页浏览型号K6F2008S2M-TC15的Datasheet PDF文件第3页浏览型号K6F2008S2M-TC15的Datasheet PDF文件第4页浏览型号K6F2008S2M-TC15的Datasheet PDF文件第5页浏览型号K6F2008S2M-TC15的Datasheet PDF文件第6页浏览型号K6F2008S2M-TC15的Datasheet PDF文件第7页 
K6F2008V2M, K6F2008S2M, K6F2008R2M Family  
CMOS SRAM  
Document Title  
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
Initial draft  
October 2, 1996  
Advance  
Revise  
December 1, 1996  
Preliminary  
- Remove sTSOP1 from product  
- Rename high power product to low power.  
ISB1=10.0mA(Max)  
- Add super low power version with special handling  
ISB1=1.0mA(Max)  
- Remove 70ns and add 85ns part on KM68F2000 Family  
1.0  
2.0  
Finalize  
April 11, 1997  
March 5, 1998  
Final  
Final  
Revise  
- Change datasheet format  
- Remove reverse type package from product  
- Remove reseved speed bin(100ns)  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
1
March 1998  

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