Datasheet > K4S643233H-FE75

K4S643233H-FE75

更新时间： 2024-11-23 15:36:03

品牌	Logo	应用领域
三星 - SAMSUNG		时钟动态存储器内存集成电路
页数	文件大小	规格书
12页	141K
描述
Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

K4S643233H-FE75 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	FBGA, BGA90,9X15,32	Reach Compliance Code：	unknown
风险等级：	5.92	最长访问时间：	6 ns
最大时钟频率 (fCLK)：	133 MHz	I/O 类型：	COMMON
交错的突发长度：	1,2,4,8	JESD-30 代码：	R-PBGA-B90
JESD-609代码：	e0	内存密度：	67108864 bit
内存集成电路类型：	SYNCHRONOUS DRAM	内存宽度：	32
端子数量：	90	字数：	2097152 words
字数代码：	2000000	最高工作温度：	85 °C
最低工作温度：	-25 °C	组织：	2MX32
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA90,9X15,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, FINE PITCH
电源：	3/3.3 V	认证状态：	Not Qualified
刷新周期：	4096	连续突发长度：	1,2,4,8,FP
最大待机电流：	0.0005 A	子类别：	DRAMs
最大压摆率：	0.135 mA	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
Base Number Matches：	1

K4S643233H-FE75 数据手册

K4S643233H - F(H)E/N/G/C/L/F

Mobile-SDRAM

512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4S643233H is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA with 0.8mm ball pitch

( -FXXX : Leaded, -HXXX : Lead Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S643233H-F(H)E/N/G/C/L/F60

K4S643233H-F(H)E/N/G/C/L/F75

K4S643233H-F(H)E/N/G/C/L/F1H

K4S643233H-F(H)E/N/G/C/L/F1L

166MHz(CL=3)

133MHz(CL=3)

105MHz(CL=2)

90 FBGA

Leaded (Lead Free)

LVCMOS

105MHz(CL=3)^*1

- F(H)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

12 3 4 5 6 7...12

中文翻译

下载PDF

与K4S643233H-FE75相关器件

型号	品牌	获取价格	描述	数据表
K4S643233H-FE750	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90
K4S643233H-FF1H	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90
K4S643233H-FF60	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90
K4S643233H-FG1H	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90
K4S643233H-FG1H0	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90
K4S643233H-FG1L	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90
K4S643233H-FG75	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90
K4S643233H-FG750	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90
K4S643233H-FHE	SAMSUNG	获取价格	Mobile-SDRAM
K4S643233H-FL1H	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90

与K4S643233H-FE75相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

K4S643233H-FE75

K4S643233H-FE75 技术参数

K4S643233H-FE75 数据手册

与K4S643233H-FE75相关器件

与K4S643233H-FE75相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4S643233H-FE75

K4S643233H-FE75 技术参数

K4S643233H-FE75 数据手册

与K4S643233H-FE75相关器件

与K4S643233H-FE75相关文章

您还可以找

您在本页遇到什么问题？