Datasheet > K4S561633F-XF1H0

K4S561633F-XF1H0

更新时间： 2023-02-26 15:08:21

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	114K
描述
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, BOC-54

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4S561633F-XF1H0 数据手册

K4S561633F - X(Z)E/N/G/C/L/F

Mobile-SDRAM

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4S561633F is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,

fabricated with SAMSUNG's high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst length and programmable latencies allow the same device

to be useful for a variety of high bandwidth, high performance

memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls BOC with 0.8mm ball pitch

( -X : Leaded, -Z : Lead Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S561633F-X(Z)E/N/G/C/L/F75

K4S561633F-X(Z)E/N/G/C/L/F1H

K4S561633F-X(Z)E/N/G/C/L/F1L

133MHz(CL=3)

105MHz(CL=2)

54 BOC

Leaded (Lead Free)

LVCMOS

105MHz(CL=3)^*1

- X(Z)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)

- X(Z)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

12 3 4 5 6 7...12

中文翻译

下载PDF

与K4S561633F-XF1H0相关器件

型号	品牌	获取价格	描述	数据表
K4S561633F-XF75	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
K4S561633F-XF750	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, BOC-54
K4S561633F-XG1H0	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, BOC-54
K4S561633F-XG1L0	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, BOC-54
K4S561633F-XG750	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, BOC-54
K4S561633F-XL1H	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
K4S561633F-XL1H0	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, BOC-54
K4S561633F-XL1L	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
K4S561633F-XL750	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, BOC-54
K4S561633F-XN1H	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54

与K4S561633F-XF1H0相关文章

压敏电阻器在直流电路中的过压保护应用探讨
2024-06-07

10
电感耐压值及其与电感大小的关系
2024-06-07

13
CNY17F光耦合器：特性、应用、封装、引脚功能及替换型号解析
2024-06-07

17
DS1307资料解析：特性、引脚说明、替代推荐
2024-06-07

10

产品中心

服务支持

精选活动

关于我们

帮助中心

K4S561633F-XF1H0

K4S561633F-XF1H0 数据手册

与K4S561633F-XF1H0相关器件

与K4S561633F-XF1H0相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4S561633F-XF1H0

K4S561633F-XF1H0 数据手册

与K4S561633F-XF1H0相关器件

与K4S561633F-XF1H0相关文章

您还可以找

您在本页遇到什么问题？