Datasheet > K4S561632C-TN60

K4S561632C-TN60

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
11页	114K
描述
Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

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K4S561632C-TN60 数据手册

K4S561632C

CMOS SDRAM

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on any pin relative to Vss

Voltage on VDD supply relative to Vss

Storage temperature

Symbol

VIN, VOUT

VDD, VDDQ

TSTG

Value

-1.0 ~ 4.6

-55 ~ +150

Unit

°C

Power dissipation

Short circuit current

IOS

Note :

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C)

Parameter

Supply voltage

Symbol

VDD, VDDQ

VIH

Min

3.0

2.0

-0.3

2.4

Typ

Max

3.6

Unit

Note

3.3

Input logic high voltage

Input logic low voltage

Output logic high voltage

Output logic low voltage

Input leakage current

3.0

VDD+0.3

0.8

VIL

VOH

IOH = -2mA

IOL = 2mA

VOL

0.4

ILI

-10

Notes :

1. VIH (max) = 5.6V AC. The overshoot voltage duration is £ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is £ 3ns.

3. Any input 0V £ VIN £ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

4. The VDD condition of K4S561632C-60 is 3.135V~3.6V.

CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)

Symbol

CCLK

CIN

Min

2.5

4.0

Max

4.0

5.0

6.5

Unit

Note

Clock

RAS, CAS, WE, CS, CKE, DQM

Address

CADD

COUT

DQ0 ~ DQ15

Notes :

1. -75/7C only specify a maximum value of 3.5pF

2. -75/7C only specify a maximum value of 3.8pF

3. -75/7C only specify a maximum value of 6.0pF

Rev.0.1 Sept.2001

1 2 3 456 7 8...11

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