5秒后页面跳转
K4S28323LF-FL600 PDF预览

K4S28323LF-FL600

更新时间: 2023-01-03 10:21:43
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器
页数 文件大小 规格书
12页 141K
描述
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90

K4S28323LF-FL600 数据手册

 浏览型号K4S28323LF-FL600的Datasheet PDF文件第2页浏览型号K4S28323LF-FL600的Datasheet PDF文件第3页浏览型号K4S28323LF-FL600的Datasheet PDF文件第4页浏览型号K4S28323LF-FL600的Datasheet PDF文件第5页浏览型号K4S28323LF-FL600的Datasheet PDF文件第6页浏览型号K4S28323LF-FL600的Datasheet PDF文件第7页 
K4S28323LF - F(H)E/N/S/C/L/R  
Mobile-SDRAM  
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA  
FEATURES  
GENERAL DESCRIPTION  
• 2.5V power supply.  
The K4S28323LF is 134,217,728 bits synchronous high data  
rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,  
fabricated with SAMSUNG’s high performance CMOS technol-  
ogy. Synchronous design allows precise cycle control with the  
use of system clock and I/O transactions are possible on every  
clock cycle. Range of operating frequencies, programmable  
burst lengths and programmable latencies allow the same  
device to be useful for a variety of high bandwidth and high per-  
formance memory system applications.  
• LVCMOS compatible with multiplexed address.  
• Four banks operation.  
• MRS cycle with address key programs.  
-. CAS latency (1, 2 & 3).  
-. Burst length (1, 2, 4, 8 & Full page).  
-. Burst type (Sequential & Interleave).  
• EMRS cycle with address key programs.  
• All inputs are sampled at the positive going edge of the system  
clock.  
• Burst read single-bit write operation.  
• Special Function Support.  
-. PASR (Partial Array Self Refresh).  
-. Internal TCSR (Temperature Compensated Self Refresh)  
• DQM for masking.  
• Auto refresh.  
• 64ms refresh period (4K cycle).  
• Commercial Temperature Operation (-25°C ~ 70°C).  
• Extended Temperature Operation (-25°C ~ 85°C).  
• 90Balls FBGA with 0.8mm ball pitch  
( -FXXX : Leaded, -HXXX : Lead Free).  
ORDERING INFORMATION  
Part No.  
Max Freq.  
Interface  
Package  
K4S28323LF-F(H)E/N/S/C/L/R60  
K4S28323LF-F(H)E/N/S/C/L/R75  
K4S28323LF-F(H)E/N/S/C/L/R1H  
K4S28323LF-F(H)E/N/S/C/L/R1L  
166MHz(CL=3)  
133MHz(CL=3)  
105MHz(CL=2)  
90 FBGA  
Leaded (Lead Free)  
LVCMOS  
105MHz(CL=3)*1  
- F(H)E/N/S : Normal/Low/Super Low Power, Extended Temperature(-25°C ~ 85°C)  
- F(H)C/L/R : Normal/Low/Super Low Power, Commercial Temperature(-25°C ~ 70°C)  
NOTES :  
1. In case of 40MHz Frequency, CL1 can be supported.  
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.  
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific  
purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.  
February 2004  

与K4S28323LF-FL600相关器件

型号 品牌 获取价格 描述 数据表
K4S28323LF-FN600 SAMSUNG

获取价格

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4S28323LF-FR1L0 SAMSUNG

获取价格

Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90
K4S28323LF-FR60 SAMSUNG

获取价格

1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S28323LF-FR600 SAMSUNG

获取价格

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4S28323LF-FS750 SAMSUNG

获取价格

Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90
K4S28323LF-HC1H0 SAMSUNG

获取价格

Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4S28323LF-HE1H0 SAMSUNG

获取价格

Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4S28323LF-HE750 SAMSUNG

获取价格

Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4S28323LF-HER75 SAMSUNG

获取价格

1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S28323LF-HL1H0 SAMSUNG

获取价格

Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90