是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP | 包装说明: | TSOP2, |
针数: | 54 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.28 |
风险等级: | 5.28 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 5.4 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PDSO-G54 | 长度: | 22.22 mm |
内存密度: | 536870912 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 4 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 134217728 words | 字数代码: | 128000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128MX4 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S510432B-UC | SAMSUNG |
获取价格 |
512Mb B-die SDRAM Specification | |
K4S510432B-UC75 | SAMSUNG |
获取价格 |
512Mb B-die SDRAM Specification | |
K4S510432B-UC750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FRE | |
K4S510432B-UL75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54 | |
K4S510432B-UL750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FRE | |
K4S510432D | SAMSUNG |
获取价格 |
SDRAM Product Guide | |
K4S510432D-UC75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COM | |
K4S510432D-UC750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COM | |
K4S510432D-UC75T | SAMSUNG |
获取价格 |
Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COM | |
K4S510432D-UL75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COM |