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K4M64163LK-RF1L PDF预览

K4M64163LK-RF1L

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器
页数 文件大小 规格书
12页 113K
描述
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54

K4M64163LK-RF1L 数据手册

 浏览型号K4M64163LK-RF1L的Datasheet PDF文件第6页浏览型号K4M64163LK-RF1L的Datasheet PDF文件第7页浏览型号K4M64163LK-RF1L的Datasheet PDF文件第8页浏览型号K4M64163LK-RF1L的Datasheet PDF文件第9页浏览型号K4M64163LK-RF1L的Datasheet PDF文件第10页浏览型号K4M64163LK-RF1L的Datasheet PDF文件第11页 
K4M64163LK - R(B)N/G/L/F  
Mobile-SDRAM  
C. BURST SEQUENCE  
1. BURST LENGTH = 4  
Initial Address  
Sequential  
Interleave  
A1  
0
A0  
0
0
1
2
3
1
2
3
0
2
3
0
1
3
0
1
2
0
1
2
3
1
0
3
2
2
3
0
1
3
2
1
0
0
1
1
0
1
1
2. BURST LENGTH = 8  
Initial Address  
Sequential  
Interleave  
A2  
0
A1  
0
A0  
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
0
2
3
4
5
6
7
0
1
3
4
5
6
7
0
1
2
4
5
6
7
0
1
2
3
5
6
7
0
1
2
3
4
5
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
1
2
3
0
1
6
7
4
5
3
2
1
0
7
6
5
4
4
5
6
7
0
1
2
3
5
4
7
6
1
0
3
2
6
7
4
5
2
3
0
1
7
6
5
4
3
2
1
0
0
0
1
6
7
0
1
2
3
4
0
3
2
5
4
7
6
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
12  
January 2006  

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