是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TBGA, | 针数: | 60 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.24 | 风险等级: | 5.83 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 0.75 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PBGA-B60 |
JESD-609代码: | e1 | 长度: | 14 mm |
内存密度: | 268435456 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 16 | 湿度敏感等级: | 2 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 60 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 16MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 2.7 V |
最小供电电压 (Vsup): | 2.3 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4H561638F-GLB30 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, FBGA-60 |
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K4H561638F-GLCC | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.65ns, CMOS, PBGA60 |
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K4H561638F-TC/LA2 | SAMSUNG |
获取价格 |
256Mb F-die DDR SDRAM Specification |
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K4H561638F-TC/LAA | SAMSUNG |
获取价格 |
256Mb F-die DDR SDRAM Specification |
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K4H561638F-TC/LB0 | SAMSUNG |
获取价格 |
256Mb F-die DDR SDRAM Specification |
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K4H561638F-TC/LB3 | SAMSUNG |
获取价格 |
256Mb F-die DDR SDRAM Specification |
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K4H561638F-TCA20 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
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K4H561638F-TCB0 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
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K4H561638F-TCB00 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
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K4H561638F-TCB3 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
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