是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | TSSOP, TSSOP66,.46 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最长访问时间: | 0.75 ns | 最大时钟频率 (fCLK): | 133 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 2,4,8 |
JESD-30 代码: | R-PDSO-G66 | 内存密度: | 536870912 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 16 |
湿度敏感等级: | 3 | 端子数量: | 66 |
字数: | 33554432 words | 字数代码: | 32000000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 32MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP66,.46 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 峰值回流温度(摄氏度): | 260 |
电源: | 2.5 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 2,4,8 |
最大待机电流: | 0.005 A | 子类别: | DRAMs |
最大压摆率: | 0.36 mA | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 0.635 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4H511638B-UCB0T | SAMSUNG |
获取价格 |
DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 | |
K4H511638B-UCB30 | SAMSUNG |
获取价格 |
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | |
K4H511638B-UCCC | SAMSUNG |
获取价格 |
DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, | |
K4H511638B-ULA2 | SAMSUNG |
获取价格 |
DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 | |
K4H511638B-ULB00 | SAMSUNG |
获取价格 |
DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP | |
K4H511638B-ULB30 | SAMSUNG |
获取价格 |
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | |
K4H511638B-ZC/LA2 | SAMSUNG |
获取价格 |
512Mb B-die DDR SDRAM Specification | |
K4H511638B-ZC/LB0 | SAMSUNG |
获取价格 |
512Mb B-die DDR SDRAM Specification | |
K4H511638B-ZC/LB3 | SAMSUNG |
获取价格 |
512Mb B-die DDR SDRAM Specification | |
K4H511638B-ZC/LCC | SAMSUNG |
获取价格 |
512Mb B-die DDR SDRAM Specification |