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K4H510438M-TCA00 PDF预览

K4H510438M-TCA00

更新时间: 2024-01-05 10:46:01
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
52页 626K
描述
DDR DRAM, 128MX4, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

K4H510438M-TCA00 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2,
针数:66Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.28
风险等级:5.91访问模式:FOUR BANK PAGE BURST
最长访问时间:0.8 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PDSO-G66长度:22.22 mm
内存密度:536870912 bit内存集成电路类型:DDR DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:66
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128MX4
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mmBase Number Matches:1

K4H510438M-TCA00 数据手册

 浏览型号K4H510438M-TCA00的Datasheet PDF文件第2页浏览型号K4H510438M-TCA00的Datasheet PDF文件第3页浏览型号K4H510438M-TCA00的Datasheet PDF文件第4页浏览型号K4H510438M-TCA00的Datasheet PDF文件第5页浏览型号K4H510438M-TCA00的Datasheet PDF文件第6页浏览型号K4H510438M-TCA00的Datasheet PDF文件第7页 
512Mb DDR SDRAM  
DDR SDRAM Specification  
Version 0.7  
- 1 -  
Rev. 0.7 May, 2002  

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