5秒后页面跳转
K4F661612B PDF预览

K4F661612B

更新时间: 2024-11-11 22:47:47
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
35页 846K
描述
4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612B 数据手册

 浏览型号K4F661612B的Datasheet PDF文件第2页浏览型号K4F661612B的Datasheet PDF文件第3页浏览型号K4F661612B的Datasheet PDF文件第4页浏览型号K4F661612B的Datasheet PDF文件第5页浏览型号K4F661612B的Datasheet PDF文件第6页浏览型号K4F661612B的Datasheet PDF文件第7页 
K4F661612B,K4F641612B  
CMOS DRAM  
4M x 16bit CMOS Dynamic RAM with Fast Page Mode  
DESCRIPTION  
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory  
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power)  
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.  
Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s  
advanced CMOS process to realize high band-width, low power consumption and high reliability.  
• Fast Page Mode operation  
FEATURES  
• 2CAS Byte/Word Read/Write operation  
• Part Identification  
• CAS-before-RAS refresh capability  
• RAS-only and Hidden refresh capability  
• Self-refresh capability (L-ver only)  
• Fast parallel test mode capability  
• LVTTL(3.3V) compatible inputs and outputs  
• Early Write or output enable controlled write  
• JEDEC Standard pinout  
- K4F661612B-TC/L(3.3V, 8K Ref., TSOP)  
- K4F641612B-TC/L(3.3V, 4K Ref., TSOP)  
ActivePowerDissipation  
Unit : mW  
4K  
Speed  
-45  
8K  
• Available in Plastic TSOP(II) packages  
• +3.3V±0.3V power supply  
360  
324  
288  
468  
432  
396  
-50  
-60  
Refresh Cycles  
Part  
NO.  
Refresh  
cycle  
Refresh time  
FUNCTIONAL BLOCK DIAGRAM  
Normal  
64ms  
L-ver  
K4F661612B*  
K4F641612B  
8K  
4K  
RAS  
UCAS  
LCAS  
W
128ms  
Vcc  
Vss  
Control  
Clocks  
VBB Generator  
* Access mode & RAS only refresh mode  
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)  
CAS-before-RAS & Hidden refresh mode  
Lower  
Data in  
Buffer  
DQ0  
to  
Row Decoder  
Refresh Timer  
DQ7  
Lower  
Data out  
Buffer  
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)  
Refresh Control  
Memory Array  
OE  
4,194,304 x 16  
Cells  
Refresh Counter  
Row Address Buffer  
Col. Address Buffer  
Upper  
Data in  
Buffer  
Performance Range  
DQ8  
to  
DQ15  
Speed  
tRAC  
45ns  
50ns  
60ns  
tCAC  
12ns  
13ns  
15ns  
tRC  
tPC  
A0~A12  
(A0~A11)*1  
Upper  
Data out  
Buffer  
-45  
-50  
-60  
80ns  
90ns  
110ns  
31ns  
35ns  
40ns  
A0~A8  
(A0~A9)*1  
Column Decoder  
Note) *1 : 4K Refresh  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to  
change products and specifications without notice.  

与K4F661612B相关器件

型号 品牌 获取价格 描述 数据表
K4F661612B-L SAMSUNG

获取价格

4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612B-TC SAMSUNG

获取价格

4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612B-TC45 SAMSUNG

获取价格

Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612B-TC450 SAMSUNG

获取价格

Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612B-TC50 SAMSUNG

获取价格

Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612B-TC500 SAMSUNG

获取价格

Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612B-TC60 SAMSUNG

获取价格

Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612B-TC600 SAMSUNG

获取价格

Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612B-TL45 SAMSUNG

获取价格

Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612B-TL450 SAMSUNG

获取价格

Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50